BTS132 datasheet(2/10 Pages) INFINEON

Part #	BTS132

Description	TEMPFET(N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic)

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Manufacturer	INFINEON [Infineon Technologies AG]

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TEMPFET® BTS 132

2

19.02.04

Electrical Characteristics

at

T

j = 25 °C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Drain-source breakdown voltage

V

GS = 0, ID = 0.25 mA

V

(BR)DSS

60

––

V

Gate threshold voltage

V

GS = VDS, ID = 1 mA

V

GS(th)

1.5

2.0

2.5

Zero gate voltage drain current

V

GS = 0 V, VDS = 60 V

T

j = 25 °C

T

j = 125 °C

I

DSS

–

1

100

10

300

µA

Gate-source leakage current

V

GS = 20 V, VDS = 0

T

j = 25 °C

T

j = 150 °C

I

GSS

–

10

100

nA

µA

Drain-source on-state resistance

V

GS = 4.5 V, ID =12 A

R

DS(on)

–

0.055

0.065

Ω

Dynamic Characteristics

Forward transconductance

V

DS ≥ 2 × ID × RDS(on)max, ID = 12 A

g

fs

12

17

22

S

Input capacitance

V

GS = 0, VDS = 25 V, f = 1 MHz

C

iss

800

1050

1400

pF

Output capacitance

V

GS = 0, VDS = 25 V, f = 1 MHz

C

oss

–

500

750

Reverse transfer capacitance

V

GS = 0, VDS = 25 V, f = 1 MHz

C

rss

–

200

300

Turn-on time

t

on, (ton = td(on) + tr)

V

CC = 30 V, VGS = 5 V, ID = 3 A, RGS = 50 Ω

t

d(on)

–

25

40

ns

t

r

–

150

200

Turn-off time

t

off, (toff = td(off) + tf)

V

CC = 30 V, VGS = 5 V, ID = 3 A, RGS = 50 Ω

t

d(off)

–

180

250

t

f

–

125

160

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