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BSS83P Datasheet(PDF) 2 Page - Infineon Technologies AG |
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BSS83P Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 9 page 2003-06-23 Page 2 BSS 83 P Rev. 1.0 Thermal Characteristics Parameter Symbol Unit Values min. max. typ. Characteristics Thermal resistance, junction - soldering point ( Pin 3 ) 150 K/W - RthJS - SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) RthJA - - - - 350 300 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = -250 µA V(BR)DSS -60 - V - Gate threshold voltage, VGS = VDS ID = -80 µA -1 -1.5 -2 VGS(th) Zero gate voltage drain current VDS = -60 V, VGS = 0 V, Tj = 25 °C VDS = -60 V, VGS = 0 V, Tj = 125 °C µA -1 -100 IDSS -0.1 -10 - - IGSS - -10 -100 Gate-source leakage current VGS = -20 V, VDS = 0 V nA Drain-source on-state resistance VGS = -4.5 V, ID = -0.27 A RDS(on) - 2 3 W Drain-source on-state resistance VGS = -10 V, ID = -0.33 A RDS(on) - 1.4 2 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. |
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