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STF25N60M2-EP Datasheet(PDF) 1 Page - STMicroelectronics |
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STF25N60M2-EP Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 14 page January 2015 DocID027251 Rev 2 1/14 This is information on a product in full production. www.st.com STF25N60M2-EP N- channel 600 V, 0.175 Ω typ., 18 A MDmesh™ M2 EP Power MOSFET in a TO-220FP package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS @ TJmax RDS(on) max. ID STF25N60M2-EP 650 V 0.188 Ω 18 A • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100% avalanche tested • Zener-protected Applications • Switching applications • Tailored for Very High Frequency Converters (f > 150 kHz) Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 EP enhanced performance technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters. Table 1: Device summary Order code Marking Package Packaging STF25N60M2-EP 25N60M2EP TO-220FP Tube TO-220FP 1 2 3 |
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