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RPC56EL60L5BOSY Datasheet(PDF) 17 Page - STMicroelectronics

Part No. RPC56EL60L5BOSY
Description  microcontroller for Aerospace and Defense, SIL3/ASILD safety applications
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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RPC56EL60L5BOSY Datasheet(HTML) 17 Page - STMicroelectronics

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RPC56EL60L5
Introduction
136
The following functions are implemented:
ECC encoding (32-bit boundary for data and complete address bus)
ECC decoding (32-bit boundary and entire address)
Address translation from the AHB protocol on the XBAR to the SRAM array
The platform SRAM controller is replicated for each processor.
1.5.9
Memory subsystem access time
Every memory access the CPU performs requires at least one system clock cycle for the
data phase of the access. Slower memories or peripherals may require additional data
phase wait states. Additional data phase wait states may also occur if the slave being
accessed is not parked on the requesting master in the crossbar.
Table 2 shows the number of additional data phase wait states required for a range of
memory accesses.
1.5.10
Error Correction Status Module (ECSM)
The ECSM on this device manages the ECC configuration and reporting for the platform
memories (flash memory and SRAM). It does not implement the actual ECC calculation. A
detected error (double error for flash memory or SRAM) is also reported to the FCCU. The
following errors and indications are reported into the ECSM dedicated registers:
ECC error status and configuration for flash memory and SRAM
ECC error reporting for flash memory
ECC error reporting for SRAM
ECC error injection for SRAM
Table 2. Platform memory access time summary
AHB transfer
Data phase
wait states
Description
e200z4d instruction fetch
0
Flash memory prefetch buffer hit (page hit)
e200z4d instruction fetch
3
Flash memory prefetch buffer miss
(based on 4-cycle random flash array access time)
e200z4d data read
0–1
SRAM read
e200z4d data write
0
SRAM 32-bit write
e200z4d data write
0
SRAM 64-bit write (executed as 2 x 32-bit writes)
e200z4d data write
0–2
SRAM 8-,16-bit write
(Read-modify-Write for ECC)
e200z4d flash memory read
0
Flash memory prefetch buffer hit (page hit)
e200z4d flash memory read
3
Flash memory prefetch buffer miss (at 120 MHz; includes 1 cycle
of program flash memory controller arbitration)


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