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RPC56EL60L5BOSY Datasheet(PDF) 91 Page - STMicroelectronics

Part No. RPC56EL60L5BOSY
Description  microcontroller for Aerospace and Defense, SIL3/ASILD safety applications
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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RPC56EL60L5BOSY Datasheet(HTML) 91 Page - STMicroelectronics

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RPC56EL60L5
Electrical characteristics
136
3.7
Static latch-up (LU)
Two complementary static tests are required on six parts to assess the latch-up
performance:
A supply overvoltage is applied to each power supply pin.
A current injection is applied to each input, output and configurable I/O pin.
These tests are compliant with the EIA/JESD 78 IC latch-up standard.
3.8
Voltage regulator electrical characteristics
The voltage regulator is composed of the following blocks:
High power regulator HPREG1 (internal ballast to support core current)
High power regulator HPREG2 (external NPN to support core current)
Low voltage detector (LVD_MAIN_1) for 3.3 V supply to IO (VDDIO)
Low voltage detector (LVD_MAIN_2) for 3.3 V supply (VDDREG)
Low voltage detector (LVD_MAIN_3) for 3.3 V flash supply (VDDFLASH)
Low voltage detector (LVD_DIG_MAIN) for 1.2 V digital core supply (HPVDD)
Low voltage detector (LVD_DIG_BKUP) for the self-test of LVD_DIG_MAIN
High voltage detector (HVD_DIG_MAIN) for 1.2 V digital CORE supply (HPVDD)
High voltage detector (HVD_DIG_BKUP) for the self-test of HVD_DIG_MAIN.
Power on Reset (POR)
HPREG1 uses an internal ballast to support the core current. HPREG2 is used only when
external NPN transistor is present on board to supply core current. The RPC56EL60L5
always powers up using HPREG1 if an external NPN transistor is present. Then the
RPC56EL60L5 makes a transition from HPREG1 to HPREG2. This transition is dynamic.
Once HPREG2 is fully operational, the controller part of HPREG1 is switched off.
3VESD(CDM)
SR
Electrostatic discharge
(Charged Device Model)
TA = 25 °C
conforming to AEC-Q100-011
C3A
500
V
750 (corners)
1.
All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits.
2.
A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device specification
requirements. Complete DC parametric and functional testing shall be performed per applicable device specification at
room temperature followed by hot temperature, unless specified otherwise in the device specification.
3.
Data based on characterization results, not tested in production.
Table 14. ESD ratings(1), (2) (continued)
No
.
Symbol
Parameter
Conditions
Clas
s
Max value(3)
Unit
Table 15. Latch-up results
No.
Symbol
Parameter
Conditions
Class
1
LU
SR
Static latch-up class
TA = 125 °C conforming to JESD 78
II level A


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