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BSP550 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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BSP550 Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 7 page BSP 550 Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 24V unless otherwise specified min typ max Semiconductor Group Page 3 20.06.96 Operating Parameters Operating voltage Tj =-25...+125°C Vbb(on) 12 40 V Undervoltage shutdown Tj =-25...+125°C Vbb(under) 7 -- 10.5 V Undervoltage restart Tj =-25...+125°C: Vbb(u rst) -- -- 11 V Undervoltage hysteresis ∆V bb(under) -- 0.4 -- V Standby current (pin 4), Vin = low Tj =-25...+100°C Tj =125°C6) Ibb(off) -- 10 25 50 µA Operating current (pin 2), Vin = high Tj =-25...+125°C IGND -- 1 1.6 mA leakage current (pin 1) Vin = low Tj =-25...+125°C IL(off) -- -- 2 µA Protection Functions Current limit (pin 4 to 1) Tj = 25°C Tj = -25...+125°C IL(SC) 1.4 1.4 2.5 -- 4.0 4.8 A Overvoltage protection I bb=4mA Tj =-25...+125°C Vbb(AZ) 48 -- -- V Output clamp (ind. load switch off) VOUT = Vbb - VON(CL), I bb = 4mA VON(CL) -- 72 -- V Thermal overload trip temperature Tjt 135 150 -- °C Thermal hysteresis ∆T jt -- 10 -- K Inductive load switch-off energy dissipation7) Tj Start = 85 °C, single pulse, IL = 1.0 A, Vbb = 12 V EAS -- -- 0.3 J Reverse Battery Reverse battery voltage8) -Vbb 30 V Continious reverse drain current TA = 25°C -IS -- -- 1 A Drain-Source diode voltage IF = 1 A, Vin = low VOUT>Vbb -VON -- -- 1.2 V 6) increase of standby current at T j = 125°C caused by temperature sense current 7) while demagnetizing load inductance, dissipated energy is E AS= ∫(VON(CL) * iL(t) dt, approx. EAS= 1/ 2 * L * I 2 L * ( VON(CL) VON(CL)-Vbb ) 8) Requires 150 Ω resistor in GND connection. Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. |
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