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BGA622 Datasheet(PDF) 5 Page - Infineon Technologies AG

Part No. BGA622
Description  Silicon Germanium Wide Band Low Noise Amplifier
Download  9 Pages
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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BGA622 Datasheet(HTML) 5 Page - Infineon Technologies AG

   
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BGA622
Data Sheet
5
2002-09-13
Maximum Ratings
Note: All Voltages refer to GND-Node
Electrical Characteristics at T
A=25°C (measured according to fig. 1)
Parameter
Symbol
Value
Unit
Voltage at pin Vcc
V
cc
3.5
V
Voltage at pin Out
V
OUT
4V
Current into pin In
I
IN
0.1
mA
Current into pin Out
I
OUT
1mA
Current into pin Vcc
I
Vcc
10
mA
RF input power
P
IN
6dBm
Total power dissipation, T
S < 139 °C
1)
1)
T
S is measured on the ground lead at the soldering point
P
tot
35
mW
Junction temperature
T
j
150
°C
Ambient temperature range
T
A
-65 ... +150
°C
Storage temperature range
T
STG
-65 ... +150
°C
Thermal resistance: junction-soldering point
R
th JS
300
K/W
Vcc=2.75 V, Frequency=1.575 GHz, unless otherwise specified
Parameter
Symbol
min.
typ.
max.
Unit
Insertion power gain
|S
21|
2
14.8
dB
Insertion power gain (Off-State)
|S
21|
2
-24
dB
Input Return Loss (On-State)
RL
IN
6dB
Output Return Loss (On-State)
RL
OUT
12
dB
Noise Figure (Z
S=50W)
F
50
W
1.05
dB
Input Third Order Intercept Point
1) (On-State)
Df=1MHz, PIN=-28dBm
1)
IP3 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50
W from 0.1 to 6 GHz
IIP
3
0dBm
Input Third Order Intercept Point
1) (Off-State)
Df=1MHz, PIN=-8dBm
IIP
3
18
dBm
Input Power at 1dB Gain Compression
P
-1dB
-16.5
dBm
Total Device Off Current, V
CC=2.75V,
V
out=VCC
I
tot-off
260
µA
Total Device On Current, V
CC=2.75V
I
tot-on
5.8
mA


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