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BFY450S Datasheet(PDF) 2 Page - Infineon Technologies AG |
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BFY450S Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 5 page BFY450 Semiconductor Group 2 of 5 Draft B, September 99 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 4.5 V Collector-base voltage VCBO 15 V Emitter-base voltage VEBO 1.5 V Collector current IC 100 mA Base current IB 10 mA Total power dissipation, TS ≤ 110°C 1), 2) Ptot 450 mW Junction temperature Tj 175 °C Operating temperature range Top -65...+175 °C Storage temperature range Tstg -65...+175 °C Thermal Resistance Junction-soldering point 2) Rth JS < 145 K/W Notes.: 1) At TS = + 110 °C. For TS > + 110 °C derating is required. 2) TS is measured on the collector lead at the soldering point to the pcb. Electrical Characteristics at TA=25°C; unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-base cutoff current VCB = 5 V, IE = 0 ICBO - - 100 nA Collector-emitter cutoff current 1.) VCE = 4.5 V, IB = 1.0µA ICEX - - 200 (t.b.d.) µA Emitter-base cuttoff current VEB = 1.5 V, IC = 0 IEBO -- 50 µA DC current gain IC = 20 mA, VCE = 1 V hFE 50 90 150 - Notes: 1.) This Test assures V(BR)CE0 > 4.5V |
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