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BFP183 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BFP183 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 7 page BFP183 Aug-10-2001 1 NPN Silicon RF Transistor For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHz VPS05178 2 1 3 4 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP183 RHs 1 = C 2 = E 3 = B 4 = E SOT143 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 65 mA Base current IB 5 Total power dissipation TS 76°C 1) Ptot 250 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point 2) RthJS 295 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance |
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