BFP183 datasheet(1/7 Pages) INFINEON

Part #	BFP183

Description	NPN Silicon RF Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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BFP183

Aug-10-2001

1

NPN Silicon RF Transistor

For low-noise, high-gain broadband amplifiers at

collector currents from 2 mA to 30 mA

fT = 8 GHz

F = 1.2 dB at 900 MHz

VPS05178

2

1

3

4

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFP183

RHs

1 = C

2 = E

3 = B

4 = E

SOT143

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

VCEO

12

V

Collector-emitter voltage

VCES

20

Collector-base voltage

VCBO

20

Emitter-base voltage

VEBO

2

Collector current

IC

65

mA

Base current

IB

5

Total power dissipation

TS

76°C 1)

Ptot

250

mW

Junction temperature

Tj

150

°C

Ambient temperature

TA

-65 ... 150

Storage temperature

Tstg

-65 ... 150

Thermal Resistance

Junction - soldering point 2)

RthJS

295

K/W

1TS is measured on the collector lead at the soldering point to the pcb

2For calculation of RthJA please refer to Application Note Thermal Resistance

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