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54ACTQ10 Datasheet(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part No. 54ACTQ10
Description  Quiet Series Triple 3-Input NAND Gate
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Maker  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
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54ACTQ10 Datasheet(HTML) 2 Page - National Semiconductor (TI)

   
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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
CC)
−0.5V to +7.0V
DC Input Diode Current (I
IK)
V
I = −0.5V
−20 mA
V
I = VCC + 0.5V
+20 mA
DC Input Voltage (V
I)
−0.5V to V
CC + 0.5V
DC Output Diode Current (I
OK)
V
O = −0.5V
−20 mA
V
O = VCC + 0.5V
+20 mA
DC Output Voltage (V
O)
−0.5V to V
CC + 0.5V
DC Output Source
or Sink Current (I
O)
±50 mA
DC V
CC or Ground Current
per Output Pin (I
CC or IGND)
±50 mA
Storage Temperature (T
STG)
−65˚C to +150˚C
DC Latch-Up Source or Sink Current
±300 mA
Junction Temperature (T
J)
CDIP
175˚C
Recommended Operating
Conditions (Note 2)
Supply Voltage (V
CC)
’ACTQ
4.5V to 5.5V
Input Voltage (V
I)
0VtoV
CC
Output Voltage (V
O)
0VtoV
CC
Operating Temperature (T
A)
54ACTQ
−55˚C to +125˚C
Minimum Input Edge Rate (dV/dt)
’ACTQ Devices
125 mV/ns
V
IN from 0.8V to 2.0V
V
CC @ 4.5V, 5.5V
Note 1: Absolute maximum ratings are values beyond which damage to the
device may occur. The databook specifications should be met, without excep-
tion, to ensure that the system design is reliable over its power supply, tem-
perature, and output/input loading variables. National does not recommend
operation outside of databook specifications.
Note 2: All commercial packaging is not recommended for applications re-
quiring greater than 2000 temperature cycles from −40˚C to +125˚C.
DC Characteristics for ’ACTQ Family Devices
54ACTQ
Symbol
Parameter
V
CC
T
A =
Units
Conditions
(V)
−55˚C to +125˚C
Guaranteed Limits
V
IH
Minimum High Level
4.5
2.0
V
V
OUT = 0.1V
Input Voltage
5.5
2.0
or V
CC − 0.1V
V
IL
Maximum Low Level
4.5
0.8
V
V
OUT = 0.1V
Input Voltage
5.5
0.8
or V
CC − 0.1V
V
OH
Minimum High Level
4.5
4.4
V
I
OUT = −50 µA
Output Voltage
5.5
5.4
(Note 3)
V
IN = VILor VIH
4.5
3.70
V
I
OH = −24 mA
5.5
4.70
I
OH =−24 mA
V
OL
Maximum Low Level
4.5
0.1
V
I
OUT = 50 µA
Output Voltage
5.5
0.1
(Note 3)
V
IN = VILor VIH
4.5
0.50
V
I
OL =24mA
5.5
0.50
I
OL =24mA
I
IN
Maximum Input
5.5
±1.0
µA
V
I = VCC, GND
Leakage Current
I
CCT
Maximum
5.5
1.6
mA
V
I = VCC − 2.1V
I
CC/Input
I
OLD
Minimum Dynamic
5.5
50
mA
V
OLD = 1.65V Max
I
OHD
Output Current (Note 4)
5.5
−50
mA
V
OHD = 3.85V Min
I
CC
Maximum Quiescent
5.5
40.0
µA
V
IN = VCC
Supply Current
or GND (Note 5)
www.national.com
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