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54ACTQ10 Datasheet(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part No. 54ACTQ10
Description  Quiet Series Triple 3-Input NAND Gate
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Maker  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
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54ACTQ10 Datasheet(HTML) 3 Page - National Semiconductor (TI)

   
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DC Characteristics for ’ACTQ Family Devices (Continued)
54ACTQ
Symbol
Parameter
V
CC
T
A =
Units
Conditions
(V)
−55˚C to +125˚C
Guaranteed Limits
V
OLP
Quiet Output
5.0
1.5
V
Maximum Dynamic V
OL
(Note 6)
V
OLV
Quiet Output
5.0
-1.2
V
Minimum Dynamic V
OL
(Note 6)
Note 3: All outputs loaded; thresholds on input associated with output under test.
Note 4: Maximum test duration 2.0 ms, one output loaded at a time.
Note 5: ICC for 54ACTQ @ 25˚C is identical to 74ACTQ @ 25˚C.
Note 6: Max number of outputs defined as (n). Data inputs are 0V to 3V. One output @ GND.
Note 7: Max number of data inputs (n) switching. (n-1) inputs switching 0V to 3V (’ACTQ). Input-under-test switching: 3V to threshold (V ILD), 0V to threshold (VIHD),
f = 1 MHZ.
AC Electrical Characteristics
54ACTQ
V
CC
T
A = −55˚C
Symbol
Parameter
(V)
(Note 8)
to +125˚C
Units
C
L = 50 pF
Min
Max
t
PLH
Propagation Delay
5.0
2.0
9.5
ns
t
PHL
Propagation Delay
5.0
2.0
9.5
ns
Note 8: Voltage Range 5.0 is 5.0V ±0.5V.
Capacitance
Symbol
Parameter
Typ
Units
Conditions
C
IN
Input Capacitance
4.5
pF
V
CC = OPEN
C
PD
Power Dissipation
85
pF
V
CC = 5.0V
Capacitance
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