BFN16 datasheet(2/5 Pages) INFINEON

Part #	BFN16

Description	NPN Silicon High-Voltage Transistors

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Manufacturer	INFINEON [Infineon Technologies AG]

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BFN16, BFN18

Nov-30-2001

2

Electrical Characteristics

at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

BFN16

BFN18

V(BR)CEO

250

300

-

V

Collector-base breakdown voltage

IC = 100 µA, IE = 0

BFN16

BFN18

V(BR)CBO

250

300

-

Emitter-base breakdown voltage

IE = 100 µA, IC = 0

V(BR)EBO

5

-

Collector cutoff current

VCB = 200 V, IE = 0

VCB = 250 V, IE = 0

BFN16

BFN18

ICBO

-

100

nA

Collector cutoff current

VCB = 200 V, IE = 0 , TA = 150 °C

VCB = 250 V, IE = 0 , TA = 150 °C

BFN16

BFN18

ICBO

-

20

µA

Emitter cutoff current

VEB = 3 V, IC = 0

IEBO

-

100

nA

DC current gain 1)

IC = 1 mA, VCE = 10 V

IC = 10 mA, VCE = 10 V

IC = 30 mA, VCE = 10 V

BFN16

BFN18

hFE

25

40

30

-

Collector-emitter saturation voltage1)

IC = 20 mA, IB = 2 mA

BFN16

BFN18

VCEsat

-

0.4

0.5

V

Base-emitter saturation voltage 1)

IC = 20 mA, IB = 2 mA

VBEsat

-

0.9

1) Pulse test: t < 300

s; D < 2%

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