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BF799 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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BF799 Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 4 page BF799 Apr-15-2003 2 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 20 - - V Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO 30 - - Base-emitter breakdown voltage IE = 10 µA, IC = 0 V(BR)EBO 3 - - Collector-base cutoff current VCB = 20 V, IE = 0 ICBO - - 100 nA DC current gain IC = 5 mA, VCE = 10 V IC = 20 mA, VCE = 10 V hFE 35 40 95 100 - 250 - Collector-emitter saturation voltage IC = 20 mA, IB = 2 mA VCEsat - 0.1 0.3 V Base-emitter saturation voltage IC = 20 mA, IB = 2 mA VBEsat - - 0.95 AC characteristics Transition frequency IC = 5 mA, VCE = 10 V, f = 100 MHz IC = 20 mA, VCE = 8 V, f = 100 MHz fT - - 800 1100 - - MHz Output capacitance VCB = 10 V, IE = 0 mA, f = 1 MHz Cob - 0.96 - pF Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 0.7 - Collector-emitter capacitance VCE = 10 V, f = 1 MHz Cce - 0.28 - Noise figure IC = 5 mA, VCE = 10 V, f = 100 MHz, ZS = 50 F - 3 - dB Output conductance IC = 20 mA, VCE = 10 V, f = 35 MHz g22e - 60 - S |
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