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BC849 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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BC849 Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 8 page BC846...BC850 2 Nov-20-2002 Maximum Ratings Parameter Symbol BC846 BC847 BC850 BC848 BC849 Unit Collector-emitter voltage VCEO 65 45 30 V Collector-base voltage VCBO 80 50 30 Collector-emitter voltage VCES 80 50 30 Emitter-base voltage VEBO 6 6 5 DC collector current IC 100 mA Peak collector current ICM 200 mA Peak base current IBM 200 Peak emitter current 200 IEM Total power dissipation , TS = 71 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 240 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BC846 BC847/850 BC848/849 V(BR)CEO 65 45 30 - - - - - - V Collector-base breakdown voltage IC = 10 µA, IE = 0 BC846 BC847/850 BC848/849 V(BR)CBO 80 50 30 - - - - - - 1For calculation of RthJA please refer to Application Note Thermal Resistance |
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