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EM346 Datasheet(PDF) 8 Page - Silicon Laboratories

Part # EM346
Description  High-Performance, Integrated Dual ZigBee PRO
Download  142 Pages
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Manufacturer  SILABS [Silicon Laboratories]
Direct Link  http://www.silabs.com
Logo SILABS - Silicon Laboratories

EM346 Datasheet(HTML) 8 Page - Silicon Laboratories

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EM346
8
Rev 1.0
2.3. Environmental Characteristics
Table 2.3 lists the rated environmental characteristics of the EM346.
2.4. DC Electrical Characteristics
Table 2.4 lists the dc electrical characteristics of the EM346.
Table 2.3. Environmental Characteristics
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
ESD (human body model)
On any pin
±2
kV
ESD (charged device model)
Non-RF pins
±400
V
ESD (charged device model)
RF pins
±225
V
Package Thermal Resistance*
JA
27.1
°C/W
*Note: Thermal resistance assumes multi-layer PCB with exposed pad soldered to a PCB board.
Table 2.4. DC Characteristics
Measured on Silicon Labs’ EM357 reference design with TA = 25 °C and VDD = 3 V, unless otherwise noted.
Parameter
Test Condition
Min
Typ
Max
Unit
Regulator input voltage
(VDD_PADS)
2.1
3.6
V
Power supply range (VDD_MEM)
Regulator output or external input
1.7
1.8
1.9
V
Power supply range (VDD_CORE)
Regulator output
1.18
1.25
1.32
V
Deep Sleep Current
Quiescent current, internal RC
oscillator disabled
–40 °C, VDD_PADS=3.6 V
0.4
A
+25 °C, VDD_PADS=3.6 V
0.4
A
+85 °C, VDD_PADS=3.6 V
0.7
A
Quiescent current, including
internal RC oscillator
–40 °C, VDD_PADS=3.6 V
0.7
A
+25 °C, VDD_PADS=3.6 V
0.7
A
+85°C, VDD_PADS=3.6 V
1.1
A
Quiescent current, including
32.768 kHz oscillator
–40 °C, VDD_PADS=3.6 V
0.8
A
+25 °C, VDD_PADS=3.6 V
1.0
A
+85 °C, VDD_PADS=3.6 V
1.5
A
Quiescent current, including
internal RC oscillator and
32.768 kHz oscillator
–40 °C, VDD_PADS=3.6 V
1.1
A
+25 °C, VDD_PADS=3.6 V
1.3
A
+85 °C, VDD_PADS=3.6 V
1.8
A
Simulated deep sleep (debug
mode) current
With no debugger activity
300
A


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