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EM346 Datasheet(PDF) 8 Page - Silicon Laboratories |
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EM346 Datasheet(HTML) 8 Page - Silicon Laboratories |
8 / 142 page EM346 8 Rev 1.0 2.3. Environmental Characteristics Table 2.3 lists the rated environmental characteristics of the EM346. 2.4. DC Electrical Characteristics Table 2.4 lists the dc electrical characteristics of the EM346. Table 2.3. Environmental Characteristics Parameter Symbol Test Condition Min Typ Max Unit ESD (human body model) On any pin — — ±2 kV ESD (charged device model) Non-RF pins — — ±400 V ESD (charged device model) RF pins — — ±225 V Package Thermal Resistance* JA 27.1 °C/W *Note: Thermal resistance assumes multi-layer PCB with exposed pad soldered to a PCB board. Table 2.4. DC Characteristics Measured on Silicon Labs’ EM357 reference design with TA = 25 °C and VDD = 3 V, unless otherwise noted. Parameter Test Condition Min Typ Max Unit Regulator input voltage (VDD_PADS) 2.1 — 3.6 V Power supply range (VDD_MEM) Regulator output or external input 1.7 1.8 1.9 V Power supply range (VDD_CORE) Regulator output 1.18 1.25 1.32 V Deep Sleep Current Quiescent current, internal RC oscillator disabled –40 °C, VDD_PADS=3.6 V — 0.4 — A +25 °C, VDD_PADS=3.6 V — 0.4 — A +85 °C, VDD_PADS=3.6 V — 0.7 — A Quiescent current, including internal RC oscillator –40 °C, VDD_PADS=3.6 V — 0.7 — A +25 °C, VDD_PADS=3.6 V — 0.7 — A +85°C, VDD_PADS=3.6 V — 1.1 — A Quiescent current, including 32.768 kHz oscillator –40 °C, VDD_PADS=3.6 V — 0.8 — A +25 °C, VDD_PADS=3.6 V — 1.0 — A +85 °C, VDD_PADS=3.6 V — 1.5 — A Quiescent current, including internal RC oscillator and 32.768 kHz oscillator –40 °C, VDD_PADS=3.6 V — 1.1 — A +25 °C, VDD_PADS=3.6 V — 1.3 — A +85 °C, VDD_PADS=3.6 V — 1.8 — A Simulated deep sleep (debug mode) current With no debugger activity — 300 — A |
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