BC817U datasheet(2/4 Pages) INFINEON

Part #	BC817U

Description	NPN Silicon Transistor Array

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Manufacturer	INFINEON [Infineon Technologies AG]

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BC817U

Nov-29-2001

2

Electrical Characteristics at TA=25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0

V(BR)CEO

45

-

V

Collector-base breakdown voltage

IC = 10 µA, IE = 0

V(BR)CBO

50

-

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

V(BR)EBO

5

-

Collector cutoff current

VCB = 25 V, IE = 0

ICBO

-

100

nA

Collector cutoff current

VCB = 25 V, IE = 0 , TA = 150 °C

ICBO

-

50

µA

Emitter cutoff current

VEB = 4 V, IC = 0

IEBO

-

100

nA

DC current gain 1)

IC = 100 mA, VCE = 1 V

IC = 300 mA, VCE = 1 V

hFE

160

100

250

-

400

-

Collector-emitter saturation voltage1)

IC = 500 mA, IB = 50 mA

VCEsat

-

0.7

V

Base-emitter saturation voltage 1)

IC = 500 mA, IB = 50 mA

VBEsat

-

1.2

AC Characteristics

Transition frequency

IC = 50 mA, VCE = 5 V, f = 100 MHz

fT

-

170

-

MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb

-

6

-

pF

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ceb

-

60

-

1) Pulse test: t < 300

s; D < 2%

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