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BC807W Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BC807W Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 5 page BC807W, BC808W Nov-29-2001 1 PNP Silicon AF Transistors For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC817W, BC818W (NPN) 1 3 VSO05561 2 Type Marking Pin Configuration Package BC807-16W BC807-25W BC807-40W BC808-16W BC808-25W BC808-40W 5As 5Bs 5Cs 5Es 5Fs 5Gs 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 Maximum Ratings Parameter Symbol Unit BC 808W BC 807W 45 Collector-emitter voltage 25 VCEO V Collector-base voltage VCBO 50 30 Emitter-base voltage VEBO 5 5 DC collector current IC 500 mA Peak collector current ICM A 1 Base current mA 100 IB 200 IBM Peak base current Total power dissipation, TS = 130 °C mW 250 Ptot 150 Tj Junction temperature °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 80 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance |
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