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AN442 Datasheet(PDF) 17 Page - Silicon Laboratories

Part # AN442
Description  DESIGNERS GUIDE
Download  22 Pages
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Manufacturer  SILABS [Silicon Laboratories]
Direct Link  http://www.silabs.com
Logo SILABS - Silicon Laboratories

AN442 Datasheet(HTML) 17 Page - Silicon Laboratories

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AN442
Rev. 0.1
17
Therefore:
and
Since the SF 4650 has a mathematical equation:
ED from the contribution of that surface can be derived by plugging in the angles, reflectance R of the surface, the
area A, and the distances RE and RD.
Note that in Figure 9, the dimension, D, represents the distance of the target to the PCB hosting both the SFH 4650
and the Si1120. As D increases, the
ET and ED angles approach 0. Also, the dimensions, R
D and RE, get
closer to the dimension, D. This simplifies ED:
So, it is indeed a fourth root function, as expected for small targets.
The analysis can be repeated for as many segments as necessary to cover the entire illuminated surface. As
shown, the irradiance, ED, was basically the contribution of a small Lambertian surface irradiated by the SFH 4650.
3.10. Calculating Irradiance from a Specular Surface Reflection
When operating in single-port, the window is shared between the detector and the LED. There are actually two
reflection coefficients, one for each polarity. The reflection coefficients are a function of the material differences at
the junction and the refractive index, n. Air = 1, and, for a transparent polycarbonate material, it is approximately
1.6.
The reflection coefficient is in the neighborhood of 10%, depending on the material. However, whatever R is, the
easiest method of calculating the effect of the LED on the detector is to create an image of the specular reflection
and then evaluate at twice the distance.
In this example, we assume that the LED and the detector are 2 cm away. Assume that the glass is 1 cm away so
that the angles of incidence and reflection are 45°. Using the approximate SFH 4650 mathematical model, the SFH
4650 at 45° has a radiant intensity of 175 mW/sr x 0.137 = 24 mW/sr assuming 400 mA current. The SFH 4650
nominally has a 50 mW/sr at 100 mA, and the derating curve chows that, at 400 mA, there is a 3.5x increase. The
equation below is a derived SFH 4650 model that was used to derive this 24 mW/sr result.
E
D
L
T A
DT
cos

R
D
2
---------------------------------------
if
A
0.5
RD
----------
5
units are in
W
m
2
-------
=
E
D
AR
I
E

ET
cos

ED
cos

R
E
2
R
D
2


--------------------------------------------------------------------------------------
units are in
W
m
2
-------
=
I
E
I
0 0.25
1
ET
90 deg
------------------


0.75
+
cos
12
ET



=
E
D
AR
I
0

D
4

------------------------------
=
I
E
I
0 0.25
1
90 deg
------------------


0.75
+
cos
12



=


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