DRTR5V0U1LP

Document number: DS36051 Rev. 2 - 2

2 of 5

www.diodes.com

March 2013

© Diodes Incorporated

DRTR5V0U1LP

Characteristic

Symbol

Value

Unit

Conditions

Peak Pulse Current

5

A

8/20μs, Per Figure 3

ESD Protection – Contact Discharge

±8

kV

Standard IEC 61000-4-2

ESD Protection – Air Discharge

±15

kV

Standard IEC 61000-4-2

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Package Power Dissipation (Note 5)

250

mW

Thermal Resistance, Junction to Ambient (Note 5)

500

C/W

Operating and Storage Temperature Range

-65 to +150

C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Reverse Working Voltage

—

—

5.5

V

—

Reverse Current (Note 6)

—

1

100

nA



Reverse Breakdown Voltage

6.0

—

—

V

Forward Voltage

—

0.8

—

V

Reverse Clamping Voltage, Positive Transients

—

10.0

—

V

Reverse Clamping Voltage, Negative Transients

—

-1.7

—

V

Dynamic Resistance

—

0.9

—

Ω

Capacitance

—

1.0

1.5

pF

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at

http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

7. For information on the impact of Diodes' USB 2.0 compatible ESD protectors on signal integrity including eye diagram plots, please refer to AN77 at the

following URL: http://www.diodes.com/destools/appnote_dnote.html.

0125

175

150

50

100

0

T , AMBIENT TEMPERATURE ( C)

Figure 1 Power Derating Curve

A

°

25

100

50

75

150

25

75

125

250

175

Note 5

200

225

0

50

25

50

75

100 125

150

T , AMBIENT TEMPERATURE (°C)

Figure 2 Pulse Derating Curve

A

0

100

25

75

175 200