DESD5V0S1BLP3

Document number: DS36257 Rev. 1 - 2

2 of 4

www.diodes.com

September 2013

© Diodes Incorporated

DESD5V0S1BLP3

Characteristic

Symbol

Value

Unit

Conditions

Peak Pulse Power Dissipation

145

W

8/20µs, Per Figure 3

Peak Pulse Current

10

A

8/20µs, Per Figure 3

ESD Protection – Contact Discharge

±30

kV

Standard IEC 61000-4-2

ESD Protection – Air Discharge

±30

kV

Standard IEC 61000-4-2

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Package Power Dissipation (Note 5)

250

mW

Thermal Resistance, Junction to Ambient (Note 5)

500

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Reverse Standoff Voltage

—

—

5

V

—

Channel Leakage Current (Note 6)

—

1

100

nA

Clamping Voltage, Positive Transients

—



—

10

V

—



—

14.5

V

Breakdown Voltage

6

—

9.5

V

Differential Resistance

—



0.5

—

Ω

Channel Input Capacitance

—

22

28

pF

—

16

22

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at

http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

0125

175

150

50

100

0

T , AMBIENT TEMPERATURE ( C)

Figure 1 Power Derating Curve

A

°

25

100

50

75

150

25

75

125

250

175

Note 5

200

225

0

50

25

50

75

100 125

150

T , AMBIENT TEMPERATURE (°C)

Figure 2 Pulse Derating Curve

A

0

100

25

75

175 200