D55V0M1B2WS

Document number: DS36160 Rev. 3 - 2

2 of 4

www.diodes.com

June 2013

© Diodes Incorporated

D55V0M1B2WS

Characteristic

Symbol

Value

Unit

Conditions

Peak Pulse Power Dissipation

200

W

8/20µs, Per Figure 2

Peak Pulse Current

2

A

8/20µs, Per Figure 2

ESD Protection – Contact Discharge

±25

kV

IEC 61000-4-2 Standard

ESD Protection – Air Discharge

±30

kV

IEC 61000-4-2 Standard

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Package Power Dissipation (Note 5)

250

mW

Thermal Resistance, Junction to Ambient (Note 5)

500

C/W

Operating and Storage Temperature Range

-65 to +150

C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Reverse Standoff Voltage

—

—

55

V

-

Channel Leakage Current (Note 6)

—

—

100

nA

Clamping Voltage

—

—



—

—

86

100

V

Breakdown Voltage

57

—

—

V

Channel Input Capacitance

—

14

25

pF

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at

http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

0

120

160

200

250

200

150

50

40

80

100

0

T , AMBIENT TEMPERATURE ( C)

Figure 1 Power Derating Curve

A

°

Note 5

0

t, TIME ( s)

Figure 2 Pulse Waveform



20

40

60

100

50

0