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D5V0P4U3LP37 Datasheet(PDF) 2 Page - Diodes Incorporated |
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D5V0P4U3LP37 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 4 page D5V0L2B3SO Document number: DS35430 Rev. 5 - 2 2 of 4 www.diodes.com January 2012 © Diodes Incorporated D5V0L2B3SO Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Conditions Peak Pulse Power Dissipation PPP 84 W 8/20 μs, Per in Fig. 1 Peak Pulse Current IPP 6 A 8/20 μs, Per in Fig. 1 ESD Protection – Contact Discharge VESD_Contact ±30 kV Standard IEC 61000-4-2 ESD Protection – Air Discharge VESD_Air ±30 kV Standard IEC 61000-4-2 Thermal Characteristics Characteristic Symbol Value Unit Package Power Dissipation (Note 5) PD 300 mW Thermal Resistance, Junction to Ambient (Note 5) RθJA 417 °C/W Operating Junction Temperature Range TJ -65 to +150 °C Storage Temperature Range TSTG -65 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Working Voltage VRWM - - 5.0 V - Breakdown Voltage VBR 6 7 8 V IR = 1.0mA Reverse Leakage Current (Note 6) IR - 10 100 nA VRWM = 5V Clamping Voltage (Note 4) VCL - 7.0 9.0 V IPP = 1A, tp = 8/20μs - 8.7 10.7 V IPP = 3A, tp = 8/20μs - 10.5 12.0 V IPP = 5A, tp = 8/20μs - 11.5 14.0 V IPP = 6A, tp = 8/20μs Differential Resistance RDIF - 0.2 - Ω IR = 1.0A, tp = 8/20μs Channel Input Capacitance CT - 15 20 pF VIN = 0V, f = 1MHz (Channel to Pin 3) Notes: 4. Measured from channel to pin 3; Non-repetitive current pulse per Fig. 1. 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com. 6. Short duration pulse test used to minimize self-heating effect. 0 t, TIME ( s) Fig. 1 Typical 8 x 20µs Pulse Waveform μ 20 40 60 100 50 0 0 25 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C) Fig. 2 Pulse Derating Curve A 50 75 0 100 175 200 |
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