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FCP190N65F Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FCP190N65F Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page www.fairchildsemi.com ©2014 Fairchild Semiconductor Corporation FCP190N65F Rev. C2 2 Package Marking and Ordering Information Electrical Characteristics T C = 25 oC unless otherwise noted. Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FCP190N65F FCP190N65F TO-220 Tube N/A N/A 50 units Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 10 mA, TJ = 25°C 650 - - V VGS = 0 V, ID = 10 mA, TJ = 150°C 700 - - ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25oC - 0.72 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V - - 10 μA VDS = 520 V, TC = 125oC- 60 - IGSS Gate to Body Leakage Current VGS = ±20 V, VDS = 0 V - - ±100 nA VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2 mA 3 - 5 V RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 10 A - 168 190 m Ω gFS Forward Transconductance VDS = 20 V, ID = 10 A -18 - S Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1 MHz - 2425 3225 pF Coss Output Capacitance - 2110 2805 pF Crss Reverse Transfer Capacitance - 105 155 pF Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz - 44 - pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V - 304 - pF Qg(tot) Total Gate Charge at 10V VDS = 380 V, ID = 10 A, VGS = 10 V (Note 4) -60 78 nC Qgs Gate to Source Gate Charge - 12 - nC Qgd Gate to Drain “Miller” Charge - 25 - nC ESR Equivalent Series Resistance f = 1 MHz - 0.6 - Ω td(on) Turn-On Delay Time VDD = 380 V, ID = 10 A, VGS = 10 V, Rg = 4.7 Ω (Note 4) -25 60 ns tr Turn-On Rise Time - 11 32 ns td(off) Turn-Off Delay Time - 62 134 ns tf Turn-Off Fall Time - 4.2 18 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 20.6 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 61.8 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 10 A - - 1.2 V trr Reverse Recovery Time VGS = 0 V, ISD = 10 A, dIF/dt = 100 A/μs - 105 - ns Qrr Reverse Recovery Charge - 515 - nC Notes: 1. Repetitive rating: pulse width limited by maximum junction temperature. 2. IAS = 4 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 10 A, di/dt ≤ 200 A/μs, VDD ≤ 380 V, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. |
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