FCP190N65F datasheet(2/9 Pages) FAIRCHILD

Part #	FCP190N65F

Description	LCD / LED / PDP TV

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FCP190N65F Rev. C2

2

Package Marking and Ordering Information

Electrical Characteristics T

C = 25

oC unless otherwise noted.

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Part Number

Top Mark

Package

Packing Method

Reel Size

Tape Width

Quantity

FCP190N65F

TO-220

Tube

N/A

50 units

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain to Source Breakdown Voltage

VGS = 0 V, ID = 10 mA, TJ = 25°C

650

-

V

VGS = 0 V, ID = 10 mA, TJ = 150°C

700

-

ΔBVDSS / ΔTJ Breakdown Voltage Temperature

Coefficient

ID = 10 mA, Referenced to 25oC

-

0.72

-

V/oC

IDSS

Zero Gate Voltage Drain Current

VDS = 650 V, VGS = 0 V

-

10

μA

VDS = 520 V, TC = 125oC-

60

-

IGSS

Gate to Body Leakage Current

VGS = ±20 V, VDS = 0 V

-

±100

nA

VGS(th)

Gate Threshold Voltage

VGS = VDS, ID = 2 mA

3

-

5

V

RDS(on)

Static Drain to Source On Resistance

VGS = 10 V, ID = 10 A

-

168

190

m

Ω

gFS

Forward Transconductance

VDS = 20 V, ID = 10 A

-18

-

S

Ciss

Input Capacitance

VDS = 25 V, VGS = 0 V,

f = 1 MHz

-

2425

3225

pF

Coss

Output Capacitance

-

2110

2805

pF

Crss

Reverse Transfer Capacitance

-

105

155

pF

Coss

Output Capacitance

VDS = 380 V, VGS = 0 V, f = 1 MHz

-

44

-

pF

Coss(eff.)

Effective Output Capacitance

VDS = 0 V to 400 V, VGS = 0 V

-

304

-

pF

Qg(tot)

Total Gate Charge at 10V

VDS = 380 V, ID = 10 A,

VGS = 10 V

(Note 4)

-60

78

nC

Qgs

Gate to Source Gate Charge

-

12

-

nC

Qgd

Gate to Drain “Miller” Charge

-

25

-

nC

ESR

Equivalent Series Resistance

f = 1 MHz

-

0.6

-

Ω

td(on)

Turn-On Delay Time

VDD = 380 V, ID = 10 A,

VGS = 10 V, Rg = 4.7 Ω

(Note 4)

-25

60

ns

tr

Turn-On Rise Time

-

11

32

ns

td(off)

Turn-Off Delay Time

-

62

134

ns

tf

Turn-Off Fall Time

-

4.2

18

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

20.6

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

61.8

A

VSD

Drain to Source Diode Forward Voltage

VGS = 0 V, ISD = 10 A

-

1.2

V

trr

Reverse Recovery Time

VGS = 0 V, ISD = 10 A,

dIF/dt = 100 A/μs

-

105

-

ns

Qrr

Reverse Recovery Charge

-

515

-

nC

Notes:

1. Repetitive rating: pulse width limited by maximum junction temperature.

2. IAS = 4 A, RG = 25 Ω, starting TJ = 25°C.

3. ISD ≤ 10 A, di/dt ≤ 200 A/μs, VDD ≤ 380 V, starting TJ = 25°C.

4. Essentially independent of operating temperature typical characteristics.

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