D1213A-01LP4

Document number: DS35760 Rev. 5 - 2

2 of 4

www.diodes.com

August 2012

© Diodes Incorporated

D1213A-01LP4

Characteristic

Symbol

Value

Unit

Conditions

Peak Pulse Current

5

A

8/20

μs, Per Figure 2

ESD Protection – Contact Discharge

±8

kV

Standard IEC 61000-4-2

ESD Protection – Air Discharge

±15

kV

Standard IEC 61000-4-2

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Package Power Dissipation (Note 5)

250

mW

Thermal Resistance, Junction to Ambient (Note 5)

500

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Reverse working voltage

—

—

3.3

V

—

Reverse current (Note 6)

—

0.1

1.0

μA

Reverse breakdown voltage

6.0

—

—

V

Forward voltage

0.6

0.8

0.95

V

Reverse clamping voltage, Positive Transients

—

10.0

—

V

Reverse clamping voltage, Negative Transients

—

-1.7

—

V

Dynamic resistance

—

0.9

—

Ω

Capacitance

—

0.85

1.2

pF

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at

http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

0

25

50

75

100

125

150

175

200

100

75

50

25

0

T , AMBIENT TEMPERATURE (°C)

Fig. 1 Pulse Derating Curve

A

0

t, TIME ( s)

Fig. 2 Pulse Waveform

μ

20

40

60

100

50

0