INA826AIDRGR datasheet(4/43 Pages) TI1

Part #	INA826AIDRGR

Description	Supply Instrumentation Amplifier

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Manufacturer	TI1 [Texas Instruments]

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1+

49.4kW

R

G

INA826

SBOS562E – AUGUST 2011 – REVISED APRIL 2013

www.ti.com

ELECTRICAL CHARACTERISTICS (continued)

At TA = +25°C, VS = ±15 V, RL = 10 kΩ, VREF = 0 V, and G = 1, unless otherwise noted.

INA826

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

GAIN

G

Gain equation

V/V

G

Range of gain

1

1000

V/V

G = 1, VO = ±10 V

±0.003

±0.015

%

G = 10, VO = ±10 V

±0.03

±0.15

%

GE

Gain error

G = 100, VO = ±10 V

±0.04

±0.15

%

G = 1000, VO = ±10 V

±0.04

±0.15

%

G = 1, TA = –40°C to +125°C

±0.1

±1

ppm/°C

Gain vs temperature(4)

G > 1, TA = –40°C to +125°C

±10

±35

ppm/°C

G = 1 to 100, VO = –10 V to +10 V

1

5

ppm

Gain nonlinearity

G = 1000, VO = –10 V to +10 V

5

20

ppm

OUTPUT

Voltage swing

RL = 10 kΩ

(V–) + 0.1

(V+) – 0.15

V

Load capacitance stability

1000

pF

Open loop output impedance

See Figure 56

Short-circuit current

Continuous to VS/2

±16

mA

FREQUENCY RESPONSE

G = 1

1

MHz

G = 10

500

kHz

BW

Bandwidth, –3 dB

G = 100

60

kHz

G = 1000

6

kHz

G = 1, VO = ±14.5 V

1

V/µs

SR

Slew rate

G = 100, VO = ±14.5 V

1

V/µs

G = 1, VSTEP = 10 V

12

µs

G = 10, VSTEP = 10 V

12

µs

tS

Settling time to 0.01%

G = 100, VSTEP = 10 V

24

µs

G = 1000, VSTEP = 10 V

224

µs

G = 1, VSTEP = 10 V

14

µs

G = 10, VSTEP = 10 V

14

µs

tS

Settling time to 0.001%

G = 100, VSTEP = 10 V

31

µs

G = 1000, VSTEP = 10 V

278

µs

(4)

The values specified for G > 1 do not include the effects of the external gain-setting resistor, RG.

4

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