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INA826AIDRGR Datasheet(PDF) 4 Page - Texas Instruments |
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INA826AIDRGR Datasheet(HTML) 4 Page - Texas Instruments |
4 / 43 page 1+ 49.4kW R G INA826 SBOS562E – AUGUST 2011 – REVISED APRIL 2013 www.ti.com ELECTRICAL CHARACTERISTICS (continued) At TA = +25°C, VS = ±15 V, RL = 10 kΩ, VREF = 0 V, and G = 1, unless otherwise noted. INA826 PARAMETER TEST CONDITIONS MIN TYP MAX UNIT GAIN G Gain equation V/V G Range of gain 1 1000 V/V G = 1, VO = ±10 V ±0.003 ±0.015 % G = 10, VO = ±10 V ±0.03 ±0.15 % GE Gain error G = 100, VO = ±10 V ±0.04 ±0.15 % G = 1000, VO = ±10 V ±0.04 ±0.15 % G = 1, TA = –40°C to +125°C ±0.1 ±1 ppm/°C Gain vs temperature(4) G > 1, TA = –40°C to +125°C ±10 ±35 ppm/°C G = 1 to 100, VO = –10 V to +10 V 1 5 ppm Gain nonlinearity G = 1000, VO = –10 V to +10 V 5 20 ppm OUTPUT Voltage swing RL = 10 kΩ (V–) + 0.1 (V+) – 0.15 V Load capacitance stability 1000 pF Open loop output impedance See Figure 56 Short-circuit current Continuous to VS/2 ±16 mA FREQUENCY RESPONSE G = 1 1 MHz G = 10 500 kHz BW Bandwidth, –3 dB G = 100 60 kHz G = 1000 6 kHz G = 1, VO = ±14.5 V 1 V/µs SR Slew rate G = 100, VO = ±14.5 V 1 V/µs G = 1, VSTEP = 10 V 12 µs G = 10, VSTEP = 10 V 12 µs tS Settling time to 0.01% G = 100, VSTEP = 10 V 24 µs G = 1000, VSTEP = 10 V 224 µs G = 1, VSTEP = 10 V 14 µs G = 10, VSTEP = 10 V 14 µs tS Settling time to 0.001% G = 100, VSTEP = 10 V 31 µs G = 1000, VSTEP = 10 V 278 µs (4) The values specified for G > 1 do not include the effects of the external gain-setting resistor, RG. 4 Submit Documentation Feedback Copyright © 2011–2013, Texas Instruments Incorporated Product Folder Links: INA826 |
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