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DMPH6050SK3Q-13 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMPH6050SK3Q-13 Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 7 page  DMPH6050SK3Q Document number: DS37293 Rev. 4 - 2 2 of 7 www.diodes.com July 2015 © Diodes Incorporated DMPH6050SK3Q Q Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 7) VGS = -10V Steady State TC = +25°C TC = +70°C ID -23.6 -19 A Steady State TA = +25°C TA = +70°C ID -7.2 -6.0 A Pulsed Drain Current (10 μs pulse, duty cycle = 1%) IDM -40 A Maximum Continuous Body Diode Forward Current (Note 7) IS -3.8 A Avalanche Current (Note 8) L = 0.1mH IAS -25 A Avalanche Energy (Note 8) L = 0.1mH EAS 31 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 6) PD 1.9 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RJA 80 °C/W Total Power Dissipation (Note 7) PD 3.8 W Thermal Resistance, Junction to Ambient (Note 7) Steady State RJA 39 °C/W Thermal Resistance, Junction to Case (Note 7) RJC 3 Operating and Storage Temperature Range TJ, TSTG -55 to +175 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BVDSS -60 — — V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — -1 µA VDS = -60V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 9) Gate Threshold Voltage VGS(th) -1 — -3 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) — — 50 m Ω VGS = -10V, ID = -7A — 70 VGS = -4.5V, ID = -7A Diode Forward Voltage VSD — -0.7 -1.2 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Ciss — 1,377 — pF VDS = -30V, VGS = 0V, f = 1MHz Output Capacitance Coss — 87 — pF Reverse Transfer Capacitance Crss — 68 — pF Gate Resistance Rg — 12 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -4.5V) Qg — 12 — nC VDS = -30V, ID = -5A Total Gate Charge (VGS = -10V) Qg — 25 — nC Gate-Source Charge Qgs — 3.8 — nC Gate-Drain Charge Qgd — 4.9 — nC Turn-On Delay Time tD(on) — 5.3 — ns VDS = -30V, VGS = -10V, RG = 3Ω, ID = -5A Turn-On Rise Time tr — 8.6 — ns Turn-Off Delay Time tD(off) — 49.4 — ns Turn-Off Fall Time tf — 29.7 — ns Body Diode Reverse Recovery Time trr — 14.2 — nS IF = -5A, di/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr — 7.9 — nC Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. |
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