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DMP10H400SE-13 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMP10H400SE-13 Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 7 page  DMP10H400SE Document Number DS37841 Rev. 3 - 2 2 of 7 www.diodes.com November 2015 © Diodes Incorporated DMP10H400SE Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -100 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current, VGS = -10V (Note 5) Steady State TC = +25°C TA = +25°C ID -6.0 -2.3 A Maximum Body Diode Forward Current (Note 5) IS -1.9 A Pulsed Drain Current (380 s Pulse, Duty Cycle = 1%) IDM -10 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) TA = +25°C PD 2.0 W TA = +70°C 1.3 Thermal Resistance, Junction to Ambient (Note 5) RθJA 62 °C/W Total Power Dissipation (Note 5) TC = +25°C PD 13.7 W Thermal Resistance, Junction to Case (Note 5) RθJC 9.1 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS -100 V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS 1 µA VDS = -80V, VGS = 0V Gate-Source Leakage IGSS ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(TH) -1.0 -2.2 -3.0 V VDS = VGS, ID = -250µA Static Drain-Source On-Resistance RDS(ON) 203 250 m VGS = -10V, ID = -5A 241 300 VGS = -4.5V, ID =-5A Diode Forward Voltage VSD -0.9 -1.2 V VGS = 0V, IS = -5A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Ciss 1239 pF VDS = -25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss 42 Reverse Transfer Capacitance Crss 28 Gate Resistance Rg 13 VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = -4.5V) Qg 8.4 nC VDS = -60V, ID = -5A Total Gate Charge (VGS = -10V) Qg 17.5 Gate-Source Charge Qgs 2.8 Gate-Drain Charge Qgd 3.2 Turn-On Delay Time tD(ON) 9.1 ns VDD = -50V, RG = 9.1, ID = -5A Turn-On Rise Time tR 14.9 Turn-Off Delay Time tD(OFF) 57.4 Turn-Off Fall Time tF 34.4 Body Diode Reverse Recovery Time tRR 25.2 ns VGS = 0V, IS = -5A, di/dt = 100A/μs Body Diode Reverse Recovery Charge QRR 24.5 nC VGS = 0V, IS = -5A, di/dt = 100A/μs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. |
Similar Part No. - DMP10H400SE-13 |
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Similar Description - DMP10H400SE-13 |
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