DMN2028UVT

Document number: DS37128 Rev. 1 - 2

2 of 6

www.diodes.com

May 2015

© Diodes Incorporated

DMN2028UVT

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

20

V

Gate-Source Voltage

±8

V

Steady State

6.2

A

Maximum Body Diode Forward Current (Note 6)

1.5

A

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

40

A

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

1.2

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

105

°C/W

t<10s

76

Total Power Dissipation (Note 6)

1.6

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady state

76

°C/W

t<10s

50

Thermal Resistance, Junction to Case (Note 6)

15

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

20





V

Zero Gate Voltage Drain Current





1

Gate-Source Leakage





100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

0.4



1.5

V

Static Drain-Source On-Resistance



20

24

m

Ω



24

32

Diode Forward Voltage





1.2

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance



856



pF

f = 1.0MHz

Output Capacitance



83



Reverse Transfer Capacitance



78



Total Gate Charge



8.3



nC



Gate-Source Charge



1.3



Gate-Drain Charge



3.1



Turn-On Delay Time



13.2



ns

Turn-On Rise Time



12.6



Turn-Off Delay Time



65



Turn-Off Fall Time



22



Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.