DMC2450UV

Document number: DS38197 Rev. 1 - 2

3 of 10

www.diodes.com

September 2015

© Diodes Incorporated

DMC2450UV

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

20

—

—

V

—

—

100

nA

Gate-Source Leakage

—

—

±1.0

µA

—

—

±10.0

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

0.5

—

0.9

V

Static Drain-Source On-Resistance

—

0.3

0.48

Ω

—

0.35

0.5

—

0.45

0.7

—

0.55

0.9

—

0.65

1.5

—

2

—

Diode Forward Voltage

—

0.7

1.2

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

37.1

—

pF

f = 1.0MHz

Output Capacitance

—

6.5

—

Reverse Transfer Capacitance

—

4.8

—

Gate Resistance

—

68

—

Ω

Total Gate Charge

—

0.5

—

nC

Gate-Source Charge

—

0.07

—

Gate-Drain Charge

—

0.1

—

Turn-On Delay Time

—

4.06

—

ns

Turn-On Rise Time

—

7.28

—

Turn-Off Delay Time

—

13.74

—

Turn-Off Fall Time

—

10.54

—

Notes:

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

0

0.5

1.0

1.5

2.0

0

1

2

3

4

5

Fig. 1 Typical Output Characteristics

V

, DRAIN-SOURCE VOLTAGE (V)

DS

V

= 1.5V

GS

V

= 2.0V

GS

V

= 2.5V

GS

V

= 4.5V

GS

V

= 1.2V

GS

V

= 1.8V

GS

0

0.5

1.0

1.5

0

0.5

1

1.5

2

2.5

3

Fig. 2 Typical Transfer Characteristics

V

, GATE SOURCE VOLTAGE (V)

GS

V

= 5V

DS

T = -55°C

A

T = 25°C

A

T = 125°C

A

T = 150°C

A

T = 85°C

A