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DMN3027LFG-7 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMN3027LFG-7 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 7 page POWERDI is a registered trademark of Diodes Incorporated. DMN3027LFG Document number: DS38020 Rev. 3 - 2 2 of 7 www.diodes.com October 2015 © Diodes Incorporated DMN3027LFG Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current (Note 5) VGS = 10V Steady State TA = +25°C TA = +70°C ID 5.3 4.2 A Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 8.0 6.3 A Continuous Drain Current (Note 6) VGS = 10V t 10s TA = +25°C TA = +70°C ID 9.5 7.7 A Continuous Drain Current (Note 6) VGS = 4.5V Steady State TA = +25°C TA = +70°C ID 6.5 4.9 A Continuous Drain Current (Note 6) VGS = 4.5V t 10s TA = +25°C TA = +70°C ID 7.8 6.2 A Pulsed Drain Current (Note 7) IDM 70 A Avalanche Current (Notes 7 & 8) IAR 18 A Repetitive Avalanche Energy (Notes 7 & 8) L = 0.1mH EAR 16 mJ Thermal Characteristics Characteristic Symbol Max Unit Power Dissipation (Note 5) PD 1.0 W Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) RθJA 130.6 °C/W Power Dissipation (Note 6) PD 2.07 W Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) RθJA 62.5 °C/W Power Dissipation (Note 6) t 10s PD 3.0 W Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) t10s RθJA 43.8 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided. 7. Repetitive rating, pulse width limited by junction temperature. 8. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C. Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BVDSS 30 - - V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current TJ = +25°C IDSS - - 100 nA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±25V, VDS = 0V ON CHARACTERISTICS (Note 9) Gate Threshold Voltage VGS(TH) 0.9 1.2 1.8 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) - 13.5 18.6 m Ω VGS = 10V, ID = 10A - 22 26.5 VGS = 4.5V, ID = 7.5A Diode Forward Voltage VSD - 0.7 1.0 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Ciss - 580 - pF VDS = 15V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 110 - Reverse Transfer Capacitance Crss - 70 - Gate Resistance Rg - 2.0 3.0 Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge VGS = 4.5V Qg - 5.3 - nC VGS = 4.5V, VDS = 15V, ID = 10A Total Gate Charge VGS = 10V Qg - 11.3 - VGS = 10V, VDS = 15V, ID = 10A Gate-Source Charge Qgs - 1.9 - Gate-Drain Charge Qgd - 1.9 - Turn-On Delay Time tD(ON) - 4.4 - ns VGS = 10V, VDS = 15V, RL = 15Ω, RG = 6Ω Turn-On Rise Time tR - 4.6 - ns Turn-Off Delay Time tD(OFF) - 19.5 - ns Turn-Off Fall Time tF - 5.8 - ns Notes: 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to production testing. |
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