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DMN63D8L Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMN63D8L
Description  N-CHANNEL ENHANCEMENT MODE MOSFET
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN63D8L Datasheet(HTML) 2 Page - Diodes Incorporated

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DMN63D8L
Document number: DS38026 Rev. 1 - 2
2 of 6
www.diodes.com
August 2015
© Diodes Incorporated
DMN63D8L
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
TA = +25°C
TA = +70°C
ID
350
280
mA
t<5s
TA = +25°C
TA = +70°C
ID
400
310
mA
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) (Note 6)
IDM
1.2
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
PD
350
mW
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
RθJA
359
°C/W
Total Power Dissipation (Note 6)
PD
520
mW
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
RθJA
243
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
30
V
VGS = 0V, ID = 250A
Zero Gate Voltage Drain Current
IDSS
1.0
µA
VDS = 30V, VGS = 0V
Gate-Source Leakage
IGSS
±10.0
µA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(TH)
0.8
1.5
V
VDS = VGS, ID = 250A
Static Drain-Source On-Resistance
RDS(ON)
2.8
VGS = 10.0V, ID = 250mA
3.8
VGS = 5.0V, ID = 250mA

4.2
VGS = 4.5V, ID = 250mA

4.5
VGS = 4.0V, ID = 250mA

13
VGS = 2.5V, ID = 10mA
Forward Transconductance
gFS
80
mS
VDS = 10V, ID = 0.115A
Diode Forward Voltage
VSD
0.8
1.2
V
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
23.2
pF
VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance
Coss
3.0
Reverse Transfer Capacitance
Crss
2.2
Gate Resistance
RG

79.9

VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge VGS = 10V
Qg
0.9
nC
VGS = 10V, VDS = 30V,
ID = 150mA
Total Gate Charge VGS = 4.5V
Qg

0.4

Gate-Source Charge
Qgs
0.1
Gate-Drain Charge
Qgd
0.2
Turn-On Delay Time
tD(ON)
2.3
ns
VDD = 30V, ID = 0.115A, VGEN = 10V,
RGEN = 25
Turn-On Rise Time
tR
3.9
Turn-Off Delay Time
tD(OFF)

11.4

Turn-Off Fall Time
tF

16.7

Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6.
Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.


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