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DMN63D8L Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMN63D8L Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 6 page DMN63D8L Document number: DS38026 Rev. 1 - 2 2 of 6 www.diodes.com August 2015 © Diodes Incorporated DMN63D8L Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 350 280 mA t<5s TA = +25°C TA = +70°C ID 400 310 mA Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) (Note 6) IDM 1.2 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) PD 350 mW Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 359 °C/W Total Power Dissipation (Note 6) PD 520 mW Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 243 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250A Zero Gate Voltage Drain Current IDSS 1.0 µA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS ±10.0 µA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 0.8 1.5 V VDS = VGS, ID = 250A Static Drain-Source On-Resistance RDS(ON) 2.8 VGS = 10.0V, ID = 250mA 3.8 VGS = 5.0V, ID = 250mA 4.2 VGS = 4.5V, ID = 250mA 4.5 VGS = 4.0V, ID = 250mA 13 VGS = 2.5V, ID = 10mA Forward Transconductance gFS 80 mS VDS = 10V, ID = 0.115A Diode Forward Voltage VSD 0.8 1.2 V VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss 23.2 pF VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss 3.0 Reverse Transfer Capacitance Crss 2.2 Gate Resistance RG 79.9 VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge VGS = 10V Qg 0.9 nC VGS = 10V, VDS = 30V, ID = 150mA Total Gate Charge VGS = 4.5V Qg 0.4 Gate-Source Charge Qgs 0.1 Gate-Drain Charge Qgd 0.2 Turn-On Delay Time tD(ON) 2.3 ns VDD = 30V, ID = 0.115A, VGEN = 10V, RGEN = 25 Turn-On Rise Time tR 3.9 Turn-Off Delay Time tD(OFF) 11.4 Turn-Off Fall Time tF 16.7 Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. |
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