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CXK77P36E160GB-4AE Datasheet(PDF) 8 Page - Sony Corporation

Part # CXK77P36E160GB-4AE
Description  16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18)
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Manufacturer  SONY [Sony Corporation]
Direct Link  http://www.sony.co.jp
Logo SONY - Sony Corporation

CXK77P36E160GB-4AE Datasheet(HTML) 8 Page - Sony Corporation

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SONY®
CXK77P36E160GB / CXK77P18E160GB
Preliminary
16Mb LW R-L and 8Mb LW R-L w/ EC, rev 1.1
8 / 25
March 2, 2001
DC Electrical Characteristics
(VDD = 3.3V ± 5%, VSS = 0V, TA = 0 to 85
oC)
1. This parameter applies to all speed bins (-4, -42, -43, and -44) in both device configurations (x18 and x36).
2. For maximum output drive (i.e. minimum impedance), the ZQ pin can be tied directly to VSS.
3. For minimum output drive (i.e. maximum impedance), the ZQ pin can be left unconnected or tied to VDDQ.
4. This parameter is guaranteed by design through extensive corner lot characterization.
Item
Symbol
Test Conditions
Min
Typ
Max
Units
Notes
Input Leakage Current
(Address, Control, Clock)
ILI
VIN = VSS to VDDQ
-5
---
5
uA
Input Leakage Current
(M1, M2)
IMLI
VMIN = VSS to VDD
-10
---
10
uA
Input Leakage Current
(Data)
IDLI
VDIN = VSS to VDDQ
-10
---
10
uA
Average Power Supply
Operating Current
IDD
IOUT = 0 mA
SS = VIL, ZZ = VIL
---
---
750
mA
1
Power Supply
Standby Current
ISB
IOUT = 0 mA
ZZ = VIH
---
---
250
mA
Output High Voltage
VOH
IOH = -6.0 mA
RQ = 250
VDDQ-0.4
---
---
V
Output Low Voltage
VOL
IOL = 6.0 mA
RQ = 250
---
---
0.4
V
Output Driver Impedance
ROUT
VOH, VOL = VDDQ/2
RQ
< 125Ω
---
---
27
(25*1.1)
2,4
VOH, VOL = VDDQ/2
125
Ω ≤ RQ ≤ 300Ω
(RQ/5)*
0.9
RQ/5
(RQ/5)*
1.1
4
VOH, VOL = VDDQ/2
RQ
> 300Ω
54
(60*0.9)
---
---
3,4


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