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DMTH6010LPS-13 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMTH6010LPS-13 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 7 page DMTH6010LPS Document number: DS37354 Rev. 5 - 2 2 of 7 www.diodes.com November 2015 © Diodes Incorporated DMTH6010LPS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 5) TA = +25°C TA = +70°C ID 13.5 10.4 A Continuous Drain Current (Note 6) TC = +25°C (Note 8) ID 100 A TC = +100°C 75 Maximum Continuous Body Diode Forward Current (Note 6) IS 100 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 140 A Avalanche Current, L=0.1mH IAS 20 A Avalanche Energy, L=0.1mH EAS 20 mJ Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) TA = +25°C PD 2.6 W Thermal Resistance, Junction to Ambient (Note 5) RθJA 57 °C/W Total Power Dissipation (Note 6) TC = +25°C PD 136 W Thermal Resistance, Junction to Case (Note 6) RθJC 1.1 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +175 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 60 — — V VGS = 0V, ID = 1mA Zero Gate Voltage Drain Current IDSS — — 1 μA VDS = 48V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 1 — 3 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 5.4 8 m Ω VGS = 10V, ID = 20A — 8.3 12 VGS = 4.5V, ID = 20A Diode Forward Voltage VSD — 0.8 1.2 V VGS = 0V, IS = 20A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 2,090 — pF VDS = 30V, VGS = 0V, f = 1MHz Output Capacitance Coss — 746 — Reverse Transfer Capacitance Crss — 38.5 — Gate Resistance Rg 0.2 0.59 1.5 Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg — 19.3 — nC VDS = 30V, ID = 20A Total Gate Charge (VGS = 10V) Qg — 41.3 — Gate-Source Charge Qgs — 6 — Gate-Drain Charge Qgd — 8.8 — Turn-On Delay Time tD(ON) — 5.7 — ns VDD = 30V, VGS = 10V, ID = 20A, RG = 3Ω Turn-On Rise Time tR — 4.3 — Turn-Off Delay Time tD(OFF) — 23.4 — Turn-Off Fall Time tF — 9.7 — Body Diode Reverse Recovery Time tRR — 35.4 — ns IF = 20A, di/dt = 100A/μs Body Diode Reverse Recovery Charge QRR — 38.2 — nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. |
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