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DMTH4004SPS Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMTH4004SPS Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 7 page DMTH4004SPS Document number: DS37325 Rev. 4 - 2 2 of 7 www.diodes.com November 2015 © Diodes Incorporated DMTH4004SPS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 5) TA = +25°C TA = +70°C ID 31 26 A Continuous Drain Current (Note 6) TC = +25°C (Note 9) ID 100 A TC = +100°C 100 Maximum Continuous Body Diode Forward Current (Note 5) IS 100 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 200 A Avalanche Current, L=0.2mH IAS 45 A Avalanche Energy, L=0.2mH EAS 200 mJ Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) TA = +25°C PD 3.6 W Thermal Resistance, Junction to Ambient (Note 5) RθJA 41 °C/W Total Power Dissipation (Note 6) TC = +25°C PD 167 W Thermal Resistance, Junction to Case (Note 6) RθJC 0.9 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +175 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 40 — — V VGS = 0V, ID = 1mA Zero Gate Voltage Drain Current IDSS — — 1 μA VDS = 32V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) 2 — 4 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 2.3 2.7 m Ω VGS = 10V, ID = 90A Diode Forward Voltage VSD — 0.9 1.2 V VGS = 0V, IS = 20A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 4,305 — pF VDS = 25V, VGS = 0V, f = 1MHz Output Capacitance Coss — 1,441 — Reverse Transfer Capacitance Crss — 102 — Gate Resistance Rg — 0.77 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge Qg — 68.6 — nC VDD = 20V, ID = 90A, VGS = 10V Gate-Source Charge Qgs — 16.8 — Gate-Drain Charge Qgd — 14.2 — Turn-On Delay Time tD(ON) — 9.5 — ns VDD = 20V, VGS = 10V, ID = 90A, RG = 3.5Ω Turn-On Rise Time tR — 6.7 — Turn-Off Delay Time tD(OFF) — 26.4 — Turn-Off Fall Time tF — 8.1 — Body Diode Reverse Recovery Time tRR — 52.4 — ns IF = 50A, di/dt = 100A/μs Body Diode Reverse Recovery Charge QRR — 78.2 — nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 9. Package limited. |
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