DMT6009LFG datasheet(2/8 Pages) DIODES

Part #	DMT6009LFG

Description	60V N-CHANNEL ENHANCEMENT MODE MOSFET

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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2 / 8 page

DMT6009LFG

Document number: DS37741 Rev. 2 - 2

2 of 8

www.diodes.com

November 2015

DMT6009LFG

Marking Information

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

60

V

Gate-Source Voltage

VGSS

±16

V

Continuous Drain Current (Note 5) VGS = 10V

TC = +25C

TC = +70C

ID

34

27

A

Continuous Drain Current (Note 5) VGS = 10V

TA = +25C

TA = +70C

ID

11

9

A

Maximum Continuous Body Diode Forward Current (Note 5)

IS

2.4

A

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

IDM

90

A

Avalanche Current, L=0.1mH

IAS

28.6

A

Avalanche Energy, L=0.1mH

EAS

40.8

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

TA = +25°C

PD

2.08

W

Thermal Resistance, Junction to Ambient (Note 5)

RθJA

60

°C/W

Total Power Dissipation (Note 5)

TC = +25°C

PD

19.2

W

Thermal Resistance, Junction to Case (Note 5)

RθJC

6.5

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Note:

5. RθJA is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. RθJC is guaranteed by design

while RθJA is determined by the user’s board design.

T69 = Product Type Marking Code

YYWW = Date Code Marking

YY = Last Digit of Year (ex: 15 = 2015)

WW = Week Code (01 to 53)

T69

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DMT6009LFG Datasheet(PDF) 2 Page - Diodes Incorporated

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