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DMN6069SFG-13 Datasheet(PDF) 5 Page - Diodes Incorporated

Part # DMN6069SFG-13
Description  60V N-CHANNEL ENHANCEMENT MODE MOSFET
Download  8 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN6069SFG-13 Datasheet(HTML) 5 Page - Diodes Incorporated

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DMN6069SFG
Document number: DS37821 Rev. 3 - 2
5 of 8
www.diodes.com
September 2015
© Diodes Incorporated
DMN6069SFG
0
0.5
1
1.5
2
2.5
3
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 7. Gate Threshold Variation vs.
JunctionTemperature
I
D=1mA
I
D=250µA
0
5
10
15
20
0
0.2
0.4
0.6
0.8
1
1.2
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 8. Diode Forward Voltage vs. Current
V
GS=0V
T
A=-55℃
T
A=25℃
T
A=85℃
T
A=125℃
T
A=150℃
0.1
1
10
100
1000
10000
0
10
20
30
40
50
60
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Typical Drain-Source Leakge Current vs.
Voltage
25
℃
85
℃
125
℃
150
℃
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
12
14
16
Qg (nC)
Figure 10. Gate Charge
V
DS=30V, ID=12A
10
100
1000
10000
0
10
20
30
40
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Typical Junction Capacitance
f=1MHz
Ciss
Coss
Crss
0.01
0.1
1
10
100
0.1
1
10
100
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
T
J(Max)=150℃
T
A=25℃
Single Pulse
DUT on 1*MRP board
V
GS=10V
R
DS(ON) LIMITED
P
W=10s
DC
P
W=1s
P
W=100ms
P
W=10ms
P
W=1ms
P
W=100µs


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