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DMN6069SFG-13 Datasheet(PDF) 5 Page - Diodes Incorporated |
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DMN6069SFG-13 Datasheet(HTML) 5 Page - Diodes Incorporated |
5 / 8 page DMN6069SFG Document number: DS37821 Rev. 3 - 2 5 of 8 www.diodes.com September 2015 © Diodes Incorporated DMN6069SFG 0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 T J, JUNCTION TEMPERATURE (℃) Figure 7. Gate Threshold Variation vs. JunctionTemperature I D=1mA I D=250µA 0 5 10 15 20 0 0.2 0.4 0.6 0.8 1 1.2 V SD, SOURCE-DRAIN VOLTAGE (V) Figure 8. Diode Forward Voltage vs. Current V GS=0V T A=-55℃ T A=25℃ T A=85℃ T A=125℃ T A=150℃ 0.1 1 10 100 1000 10000 0 10 20 30 40 50 60 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Typical Drain-Source Leakge Current vs. Voltage 25 ℃ 85 ℃ 125 ℃ 150 ℃ 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 16 Qg (nC) Figure 10. Gate Charge V DS=30V, ID=12A 10 100 1000 10000 0 10 20 30 40 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 11. Typical Junction Capacitance f=1MHz Ciss Coss Crss 0.01 0.1 1 10 100 0.1 1 10 100 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area T J(Max)=150℃ T A=25℃ Single Pulse DUT on 1*MRP board V GS=10V R DS(ON) LIMITED P W=10s DC P W=1s P W=100ms P W=10ms P W=1ms P W=100µs |
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