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DMN67D8LDW-13 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMN67D8LDW-13 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 6 page DMN67D8LDW Document number: DS38034 Rev. 1 - 2 2 of 6 www.diodes.com August 2015 © Diodes Incorporated DMN67D8LDW Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 230 180 mA Maximum Continuous Body Diode Forward Current (Note 6) IS 0.5 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) (Note 6) IDM 0.8 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) PD 320 mW Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 400 °C/W Total Power Dissipation (Note 6) PD 410 mW Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 312 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 60 — — V VGS = 0V, ID = 10µA Zero Gate Voltage Drain Current IDSS — — 1.0 µA VDS = 60V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 1.0 — 2.5 V VDS = 10V, ID = 250µA Static Drain-Source On-Resistance RDS(ON) — 1.5 3.2 5.0 7.5 Ω VGS = 10V, ID = 0.5A VGS = 5V, ID = 0.05A Forward Transfer Admittance |Yfs| 80 — — mS VDS =10V, ID = 0.2A Diode Forward Voltage VSD — 0.78 1.5 V VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 22 — pF VDS = 25V, VGS = 0V f = 1.0MHz Output Capacitance Coss — 4.1 — pF Reverse Transfer Capacitance Crss — 2.5 — pF Gate Resistance Rg — 120 — Ω f = 1.0MHz , VGS = 0V, VDS = 0V Total Gate Charge (VGS = 4.5V) Qg — 361 — pC VGS = 4.5V, VDS = 10V, ID = 250mA Total Gate Charge (VGS = 10V) Qg — 821 — pC Gate-Source Charge Qgs — 162 — pC Gate-Drain Charge Qgd — 116 — pC Turn-On Delay Time tD(ON) — 2.8 — ns VDD = 30V, ID = 0.2A, RL = 150, VGS = 10V, RG = 25 Turn-On Rise Time tR — 3.0 — ns Turn-Off Delay Time tD(OFF) — 7.6 — ns Turn-Off Fall Time tF — 5.6 — ns Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. |
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