DMN61D8LVT-7 datasheet(3/9 Pages) DIODES

Part #	DMN61D8LVT-7

Description	Provides a more reliable and robust interface between sensitive logic and DC relay coils.

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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3 / 9 page

DMN61D8L/LVT

Document number: DS37630 Rev. 3 - 2

3 of 9

www.diodes.com

April 2015

DMN61D8L/LVT

Thermal Characteristics (SOT23) (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

PD

390

mW

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

321

°C/W

Total Power Dissipation (Note 6)

PD

610

mW

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

208

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Thermal Characteristics (TSOT26) (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

PD

820

mW

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

154

°C/W

Total Power Dissipation (Note 6)

PD

1090

mW

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

116

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

60



V

VGS = 0V, ID = 10mA

Zero Gate Voltage Drain Current

IDSS



50

0.5

µA

VDS = 60V, VGS = 0V

VDS = 12V, VGS = 0V

Gate-Source Leakage

IGSS



±90

±60

µA

VGS = ±5V, VDS = 0V

VGS = ±3V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(th)

1.3



2.0

V

VDS = VGS, ID = 1mA

Static Drain-Source On-Resistance

RDS(ON)



1.1

1.4

1.8

2.4

Ω

VGS =5V, ID = 0.15A

VGS = 3V, ID = 0.15A

Forward Transfer Admittance

|Yfs|

80



ms

VDS =12V, ID = 0.15A

Diode Forward Voltage

VSD





1.2



V

VGS = 0V, IS = 0.15A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss



12.9



pF

VDS = 12V, VGS = 0V

f = 1.0MHz

Output Capacitance

Coss



17



pF

Reverse Transfer Capacitance

Crss



0.84



pF

Total Gate Charge

Qg



0.74



nC

VGS = 5V, VDS = 12V,

ID =150mA

Gate-Source Charge

Qgs



0.19



nC

Gate-Drain Charge

Qgd



0.16



nC

Turn-On Delay Time

tD(on)



131



ns

VDD = 12V, VGS = 5V.

Turn-On Rise Time

tr



301



ns

Turn-Off Delay Time

tD(off)



582



ns

Turn-Off Fall Time

tf



440



ns

Notes:

5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6.

Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. copper, single sided.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

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