DMN53D0LQ-13 datasheet(3/7 Pages) DIODES

Part #	DMN53D0LQ-13

Description	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Manufacturer	DIODES [Diodes Incorporated]

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3 / 7 page

DMN53D0LQ

Document number: DS38552 Rev. 1 - 2

3 of 7

www.diodes.com

January 2016

DMN53D0LQ

V

, DRAIN-SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristics

DS

0.0

0.3

0.6

0.9

1.2

1.5

0

1

2

3

4

5

V

= 1.8V

GS

V

= 3.5V

GS

V

= 10V

GS

V

= 2V

GS

V

= 2.5V

GS

V

= 3V

GS

V

= 4.5V

GS

V

= 5V

GS

V

, GATE-SOURCE VOLTAGE (V)

GS

Figure 2 Typical Transfer Characteristics

0

0.2

0.4

0.6

0.8

1

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

V

= 5V

DS

T = 150°C

A

T = 125°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

I , DRAIN-SOURCE CURRENT (A)

D

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

0.5

0.6

0.7

0.8

0.9

1

0

0.2

0.4

0.6

0.8

1

V

= 5V

GS

V

= 10V

GS

I , DRAIN CURRENT (A)

D

Figure 4 Typical On-Resistance vs.

Drain Current and Temperature

0

0.5

1

1.5

2

2.5

0

0.2

0.4

0.6

0.8

1

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

= 4.5V

GS

T , JUNCTION TEMPERATURE ( C)

Figure 5 On-Resistance Variation with Temperature

J



0.4

0.8

1.2

1.6

2.0

2.4

-50

-25

0

25

50

75

100

125

150

V

= 5V

I = 300mA

GS

D

V

=

V

I = 500mA

GS

D

10

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE ( C)

Figure 6 On-Resistance Variation with Temperature

J



0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

V

= 5V

I = 300mA

GS

D

V

=

V

I = 500mA

GS

D

10

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