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961102-6404-AR Datasheet(PDF) 1 Page - Integrated Device Technology |
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961102-6404-AR Datasheet(HTML) 1 Page - Integrated Device Technology |
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1 / 26 page  RF to IF Dual Downconverting Mixer 1700 - 2200 MHz F1150NBGI IDT Zero-Distortion TM Mixer 1 Rev2, July 2012 DATASHEET GENERAL DESCRIPTION This document describes the specifications for the IDTF1150 Zero-Distortion TM RF to IF Downconverting Mixer. This device is part of a series of downconverting mixers offered with high side or low side injection options for all UTRA bands. See the Part# Matrix for the details of all devices in this series. The F1150 dual channel device is designed to operate with a single 5V supply. It is optimized for operation in a Multi-mode, Multi-carrier BaseStation Receiver for RF bands from 1700 - 2200 MHz with High Side Injection. IF frequencies from 50 to 450 MHz are supported. Nominally, the device offers +40 dBm Output IP3 with 335 mA of ICC. Alternately one can adjust 4 resistor values and a toggle pin to run the device in low current mode with +36 dBm Output IP3 and 235 mA of ICC. COMPETITIVE ADVANTAGE In typical basestation receivers the RF to IF mixer dominates the linearity performance for the entire receive system. Zero-Distortion mixers dramatically improve the maximum signal levels (IM3 tones) that the BTS can withstand at a desired Signal to Noise Ratio (SNR.) Alternately, one can run the device in Low Current Mode to reduce Power consumption significantly. IDT’s innovative design allows realization of either benefit. IP3O: ⇑ ⇑ ⇑ ⇑ 5 dB STD Mode, ⇑ ⇑ ⇑ ⇑ 2 dB LC Mode Dissipation: ⇓ ⇓ ⇓ ⇓ 40% LC Mode, ⇓ ⇓ ⇓ ⇓ 12% STD Mode Allows for higher RF gain improving Sensitivity PART# MATRIX Part# RF freq range UTRA bands IF freq range Typ. Gain Injection F1100 698 - 915 5,6,8,12,13,14,17 ,19,20 50 - 450 8.5 High Side F1102 698 - 915 5,6,8,12,13,14,17 ,19,20 50 - 250 8.5 Both F F1 11 15 50 0 1 17 70 00 0 -- 2 22 20 00 0 1 1,,2 2,,3 3,,4 4,,9 9,,1 10 0,, 3 33 3,, 3 34 4,,3 35 5,, 3 36 6,, 3 37 7,,3 39 9 5 50 0 -- 4 45 50 0 8 8..5 5 H Hiig gh h S Siid de e F1152 1400 - 2200 1,2,3,4,9,10,11 21 1, 241, 33, 34,35, 36, 37,39 50 - 350 8.4 Low Side F1162 2200 – 2700 7,38,40,41 2 50 – 500 8.9 Both FEATURES • Dual Path for Diversity Systems • Ideal for Multi-Carrier Systems • 8.5 dB Gain (200 MHz IF) • Ultra linear +38 dBm IP3O (350 MHz IF) • Ultra linear + +4 40 0 d dB Bm m I IP P3 3OO ((2 20 00 0 M MH Hz z I IF F)) •• Low NF < 10 dB • 200 output impedance • Ultra high +13 dBm P1dBI • P Piin n C Co om mp pa attiib blle e with existing solutions • 6x6 36 pin package • P Po ow we err D Do ow wn n m mo od de e • < 200 nsec settling from Power Down • Minimizes Synth pulling in Standby Mode • Low Current Mode : I ICCCC = = 2 23 35 5 m mA A • Standard Mode: ICC = 335 mA DEVICE BLOCK DIAGRAM ORDERING INFORMATION 1 – with High side injection 2 – With High side or Low side injection RFIN_A IFOUT_A RF VCO LOISET LCMODE RFIN_B IFOUT_B Bias Control STBY 2 IDTF1150NBGI8 0.8 mm height package Green Industrial Temp range Tape & Reel Omit IDT prefix RF product Line |
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