NRVTS12100EMFST1G datasheet(3/5 Pages) ONSEMI

Part #	NRVTS12100EMFST1G

Description	Very Low Leakage Trench-based Schottky Rectifier

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Manufacturer	ONSEMI [ON Semiconductor]

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NTS12100EMFS, NRVTS12100EMFS

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TYPICAL CHARACTERISTICS

80

90

100

110

120

130

140

150

160

170

0

5

10

15

20

25

Figure 1. Typical Instantaneous Forward

Characteristics

Figure 2. Maximum Instantaneous Forward

Characteristics

VF, INSTANTANEOUS FORWARD VOLTAGE (V)

Figure 3. Typical Reverse Characteristics

Figure 4. Maximum Reverse Characteristics

VR, INSTANTANEOUS REVERSE VOLTAGE (V)

90

70

60

50

40

30

10

0

Figure 5. Typical Junction Capacitance

Figure 6. Current Derating TO−220AB

VR, REVERSE VOLTAGE (V)

TC, CASE TEMPERATURE (°C)

TA = 125°C

TA = 150°C

TA = 25°C

TA = 125°C

TA = 150°C

TA = 125°C

TA = 150°C

TA = 25°C

1.E−06

1.E−05

1.E−04

1.E−03

1.E−02

1.E−01

1.E+00

20

80

100

TA = 125°C

TA = 150°C

TA = 25°C

TJ = 25°C

RqJC = 2.0 °C/W

Square Wave

DC

0.1

1

10

100

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

TA = −55°C

0.1

1

10

100

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9 1.0

TA = 25°C

TA = −55°C

1.E−06

1.E−05

1.E−04

1.E−03

1.E−02

1.E−01

1.E+00

0

102030405060708090 100

100

1k

10k

0.1

1

10

100

TA = 175°C

1.E−07

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