NRVTS10120MFST1G datasheet(2/5 Pages) ONSEMI

Part #	NRVTS10120MFST1G

Description	Very Low Forward Voltage Trench-based Schottky Rectifier

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Manufacturer	ONSEMI [ON Semiconductor]

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NTS10120MFS, NRVTS10120MFS

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MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

120

V

Average Rectified Forward Current

(Rated VR, TC = 138°C)

IF(AV)

10

A

Peak Repetitive Forward Current,

(Rated VR, Square Wave, 20 kHz, TC = 136°C)

IFRM

20

A

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)

IFSM

200

A

Storage Temperature Range

Tstg

−65 to +150

°C

Operating Junction Temperature

TJ

−55 to +150

°C

Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)

EAS

100

mJ

ESD Rating (Human Body Model)

3B

ESD Rating (Machine Model)

M4

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Typ

Max

Unit

Thermal Resistance, Junction−to−Case, Steady State

(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)

RθJC

1.8

−

°C/W

ELECTRICAL CHARACTERISTICS

Rating

Symbol

Typ

Max

Unit

Instantaneous Forward Voltage (Note 1)

(IF = 5 A, TJ = 25°C)

(IF = 10 A, TJ = 25°C)

(IF = 5 A, TJ = 125°C)

(IF = 10 A, TJ = 125°C)

VF

0.587

0.73

0.510

0.587

−

0.825

−

0.67

V

Instantaneous Reverse Current (Note 1)

(VR = 90 V, TJ = 25°C)

(Rated dc Voltage, TJ = 25°C)

(VR = 90 V, TJ = 125°C)

(Rated dc Voltage, TJ = 125°C)

IR

3.4

14.5

3.5

9.2

−

55

−

30

mA

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: Pulse Width = 300

ms, Duty Cycle ≤ 2.0%.

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NRVTS10120MFST1G Datasheet(PDF) 2 Page - ON Semiconductor

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