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54ABT245 Datasheet(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part No. 54ABT245
Description  Octal Bidirectional Transceiver with TRI-STATE Outputs
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

54ABT245 Datasheet(HTML) 3 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Storage Temperature
−65˚C to +150˚C
Ambient Temperature under Bias
−55˚C to +125˚C
Junction Temperature under Bias
Ceramic
−55˚C to +175˚C
V
CC Pin Potential to
Ground Pin
−0.5V to +7.0V
Input Voltage (Note 2)
−0.5V to +7.0V
Input Current (Note 2)
−30 mA to +5.0 mA
Voltage Applied to Any Output
in the Disabled or
Power-off State
−0.5V to 5.5V
in the HIGH State
−0.5V to V
CC
Current Applied to Output
in LOW State (Max)
twice the rated I
OL (mA)
DC Latchup Source Current
−500 mA
Over Voltage Latchup (I/O)
10V
Recommended Operating
Conditions
Free Air Ambient Temperature
Military
−55˚C to +125˚C
Supply Voltage
Military
+4.5V to +5.5V
Minimum Input Edge Rate
(
∆V/∆t)
Data Input
50 mV/ns
Enable Input
20 mV/ns
Note 1: Absolute maximum ratings are values beyond which the device may
be damaged or have its useful life impaired. Functional operation under these
conditions is not implied.
Note 2: Either voltage limit or current limit is sufficient to protect inputs.
DC Electrical Characteristics
Symbol
Parameter
ABT245
Units
V
CC
Conditions
Min
Typ
Max
V
IH
Input HIGH Voltage
2.0
V
Recognized HIGH Signal
V
IL
Input LOW Voltage
0.8
V
Recognized LOW Signal
V
CD
Input Clamp Diode Voltage
−1.2
V
Min
I
IN = −18 mA (OE, T/R)
V
OH
Output HIGH
Voltage
54ABT
2.5
V
Min
I
OH = −3 mA (An,Bn)
54ABT
2.0
V
Min
I
OH = −24 mA (An,Bn)
V
OL
Output LOW
Voltage
54ABT
0.55
V
Min
I
OL = 48 mA (An,Bn)
I
IH
Input HIGH Current
5
µA
Max
V
IN = 2.7V (OE, T/R) (Note 3)
5V
IN = VCC (OE, T/R)
I
BVI
Input HIGH Current Breakdown Test
7
µA
Max
V
IN = 7.0V (OE, T/R)
I
BVIT
Input HIGH Current Breakdown Test
(I/O)
100
µA
Max
V
IN = 5.5V (An,Bn)
I
IL
Input LOW Current
−5
µA
Max
V
IN = 0.5V (OE, T/R) (Note 3)
−5
V
IN = 0.0V (OE, T/R)
V
ID
Input Leakage Test
4.75
V
0.0
I
ID = 1.9 µA (OE, T/R)
All Other Pins Grounded
I
IH +I OZH
Output Leakage Current
50
µA
0 − 5.5V
V
OUT = 2.7V (An,Bn); OE = 2.0V
I
IL +IOZL
Output Leakage Current
−50
µA
0 − 5.5V
V
OUT = 0.5V (An,Bn); OE = 2.0V
I
OS
Output Short-Circuit Current
−100
−275
mA
Max
V
OUT = 0.0V (An,Bn)
I
CEX
Output High Leakage Current
50
µA
Max
V
OUT = VCC (An,Bn)
I
ZZ
Bus Drainage Test
100
µA
0.0
V
OUT = 5.5V (An,Bn);
All Others GND
I
CCH
Power Supply Current
50
µA
Max
All Outputs HIGH
I
CCL
Power Supply Current
30
mA
Max
All Outputs LOW
I
CCZ
Power Supply Current
50
µA
Max
OE = V
CC, T/R = GND or VCC;
All Other GND or V
CC
I
CCT
Additional
Outputs Enabled
2.5
mA
V
I = VCC − 2.1V
I
CC/Input
Outputs TRI-STATE
2.5
mA
Max
OE, T/R V
I = VCC − 2.1V
Outputs TRI-STATE
50
µA
Data Input V
I = VCC − 2.1V
All Others at V
CCor GND.
3
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