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OPA2835IRMCT Datasheet(PDF) 9 Page - Texas Instruments

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Part # OPA2835IRMCT
Description  Ultralow-Power, Rail-to-Rail Out, Negative Rail In, VFB Op Amp
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

OPA2835IRMCT Datasheet(HTML) 9 Page - Texas Instruments

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OPA835, OPA2835
www.ti.com
SLOS713H – JANUARY 2011 – REVISED NOVEMBER 2015
Electrical Characteristics: VS = 2.7 V (continued)
Test conditions unless otherwise noted: VS+ = +2.7 V, VS– = 0 V, VOUT = 1 VPP, RF = 0 Ω, RL = 2 kΩ, G = 1 V/V, input and
output referenced to mid-supply, VIN_CM = mid-supply – 0.5 V. TA = 25°C, unless otherwise noted.
TEST
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
LEVEL(1)
GAIN SETTING RESISTORS (OPA835IRUN ONLY)
Resistor FB1 to FB2
DC resistance
2376
2400
2424
Ω
A
Resistor FB2 to FB3
DC resistance
1782
1800
1818
Ω
A
Resistor FB3 to FB4
DC resistance
594
600
606
Ω
A
Resistor tolerance
DC resistance
–1%
1%
A
Resistor temperature coefficient
DC resistance
<10
PPM
C
POWER SUPPLY
Specified operating voltage
2.5
5.5
V
B
TA = 25°C
175
245
340
µA
A
Quiescent operating current per
amplifier
TA = –40°C to 125°C
135
345
µA
B
Power supply rejection (±PSRR)
88
105
dB
A
POWER DOWN (PIN MUST BE DRIVEN)
Enable voltage threshold
Specified on above VS–+ 2.1 V
1.4
2.1
V
A
Disable voltage threshold
Specified off below VS–+ 0.7 V
0.7
1.4
V
A
Power-down pin bias current
PD = 0.5 V
20
500
nA
A
Power-down quiescent current
PD = 0.5 V
0.5
1.5
µA
A
Turnon time delay
Time from PD = high to VOUT = 90% of final value
250
ns
C
Turnoff time delay
Time from PD = low to VOUT = 10% of original value
50
ns
C
7.7 Electrical Characteristics: VS = 5 V
Test conditions unless otherwise noted: VS+ = +5 V, VS– = 0 V, VOUT = 2 VPP, RF = 0 Ω, RL = 2 kΩ, G = 1 V/V, input and output
referenced to mid-supply. TA = 25°C, unless otherwise noted.
TEST
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
LEVEL(1)
AC PERFORMANCE
VOUT = 100 mVPP, G = 1
56
VOUT = 100 mVPP, G = 2
22.5
Small-signal bandwidth
MHz
C
VOUT = 100 mVPP, G = 5
7.4
VOUT = 100 mVPP, G = 10
3.1
Gain-bandwidth product
VOUT = 100 mVPP, G = 10
31
MHz
C
Large-signal bandwidth
VOUT = 2 VPP, G = 1
31
MHz
C
Bandwidth for 0.1-dB flatness
VOUT = 2 VPP, G = 2
14.5
MHz
C
Slew rate, rise
VOUT = 2-V Step, G = 2
160
V/µs
C
Slew rate, fall
VOUT = 2-V Step, G = 2
260
V/µs
C
Rise time
VOUT = 2-V Step, G = 2
10
ns
C
Fall time
VOUT = 2-V Step, G = 2
7
ns
C
Settling time to 1%, rise
VOUT = 2-V Step, G = 2
45
ns
C
Settling time to 1%, fall
VOUT = 2-V Step, G = 2
45
ns
C
Settling time to 0.1%, rise
VOUT = 2-V Step, G = 2
50
ns
C
Settling time to 0.1%, fall
VOUT = 2-V Step, G = 2
55
ns
C
Settling time to 0.01%, rise
VOUT = 2-V Step, G = 2
82
ns
C
Settling time to 0.01%, fall
VOUT = 2-V Step, G = 2
85
ns
C
2.5%/1.5
Overshoot/Undershoot
VOUT = 2-V Step, G = 2
C
%
f = 10 kHz
–135
Second-order harmonic distortion
f = 100 kHz
–105
dBc
C
f = 1 MHz
–70
(1)
Test levels (all values set by characterization and simulation): (A) 100% tested at 25°C; over temperature limits by characterization and
simulation. (B) Not tested in production; limits set by characterization and simulation. (C) Typical value only for information.
Copyright © 2011–2015, Texas Instruments Incorporated
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