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LMH6601-Q1 Datasheet(PDF) 6 Page - Texas Instruments |
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LMH6601-Q1 Datasheet(HTML) 6 Page - Texas Instruments |
6 / 40 page LMH6601, LMH6601-Q1 SNOSAK9F – JUNE 2006 – REVISED JUNE 2015 www.ti.com Electrical Characteristics, 5 V (continued) Single-Supply with VS= 5 V, AV = +2, RF = 604 Ω, SD tied to V +, V OUT = VS/2, RL = 150 Ω to V − unless otherwise specified.(1) PARAMETER TEST CONDITIONS MIN(2) TYP(2) MAX(2) UNIT 5 45 VOL1 RL = 150 Ω to V – At temperature 125 extremes Output Low Voltage VOL2 RL = 75 Ω to VS/2 120 mV (Relative to V–) 5 45 VOL3 RL = 10 kΩ to V – At temperature 125 extremes Source 150 VOUT < 0.6 V from IO Respective Supply Sink 180 Output Current mA VOUT = VS/2, IO_1 ±100 VID = ±18 mV (6) THD < −30 dBc, f = 200 kHz, Load Output Load Rating 20 Ω RL tied to VS/2, VOUT = 4 VPP RO_Enabled Output Resistance Enabled, AV = +1 0.2 Ω RO_Disabled Output Resistance Shutdown >100 M Ω CO_Disabled Output Capacitance Shutdown 5 pF MISCELLANEOUS PERFORMANCE VDMAX Voltage Limit for Disable (Pin 5) See (5) (At temperature extremes) 0 0.5 V VDMIN Voltage Limit for Enable (Pin 5) See (5) (At temperature extremes) 4.5 5 V Ii Logic Input Current (Pin 5) SD = 5 V(5) 10 pA V_glitch Turnon Glitch 2.2 V IsolationOFF Off Isolation 1 MHz, RL = 1 kΩ 60 dB (6) “VID” is input differential voltage (input overdrive). 6.7 Electrical Characteristics, 3.3 V Single-Supply with VS= 3.3 V, AV = +2, RF = 604Ω, SD tied to V +, V OUT = VS/2, RL = 150 Ω to V − unless otherwise specified.(1) PARAMETER TEST CONDITIONS MIN(2) TYP(2) MAX(2) UNIT FREQUENCY DOMAIN RESPONSE SSBW VOUT = 0.25 VPP 125 –3-dB Bandwidth Small Signal MHz SSBW_1 VOUT = 0.25 VPP, AV = +1 250 Peak Peaking VOUT = 0.25 VPP, AV = +1 3 dB Peak_1 Peaking VOUT = 0.25 VPP 0.05 dB LSBW –3-dB Bandwidth Large Signal VOUT = 2 V PP 75 MHz Peak_2 Peaking VOUT = 2 VPP 0 dB 0.1 dB BW 0.1-dB Bandwidth VOUT = 2 VPP 30 MHz GBWP_1k Unity Gain, RL = 1 kΩ to VS/2 115 Gain Bandwidth Product MHz GBWP_150 Unity Gain, RL = 150 Ω to VS/2 105 AVOL Large Signal Open-Loop Gain 0.3 V < VOUT < 3 V 56 67 dB –1 dB, AV = +4, VOUT = 2.8 VPP, PBW Full Power BW 30 MHz RL = 150 Ω to VS/2 4.43 MHz, 0.85 V ≤ VOUT ≤ 2.45 V, DG Differential Gain 0.06% RL = 150 Ω to V − 4.43 MHz, 0.85 V ≤ VOUT ≤ 2.45 V DP Differential Phase 0.23 deg RL = 150 Ω to V − (1) Electrical Characteristics, 3.3 V values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA. (2) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped production material. 6 Submit Documentation Feedback Copyright © 2006–2015, Texas Instruments Incorporated Product Folder Links: LMH6601 LMH6601-Q1 |
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