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MBR830MFS Datasheet(PDF) 1 Page - ON Semiconductor

Part No. MBR830MFS
Description  SWITCHMODE Power Rectifiers
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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MBR830MFS Datasheet(HTML) 1 Page - ON Semiconductor

   
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© Semiconductor Components Industries, LLC, 2013
October, 2013 − Rev. 0
1
Publication Order Number:
MBR830MFS/D
MBR830MFS, NRVB830MFS
SWITCHMODE
Power Rectifiers
These state−of−the−art devices have the following features:
Features
Low Power Loss / High Efficiency
New Package Provides Capability of Inspection and Probe After
Board Mounting
Guardring for Stress Protection
Low Forward Voltage
150°C Operating Junction Temperature
Wettable Flacks Option Available
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
Mechanical Characteristics:
Case: Epoxy, Molded
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260
°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30
V
Average Rectified Forward Current
(Rated VR, TC = 143°C)
IF(AV)
8.0
A
Peak Repetitive Forward Current,
(Rated VR, Square Wave,
20 kHz, TC = 143°C)
IFRM
16
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
IFSM
150
A
Storage Temperature Range
Tstg
−65 to +150
°C
Operating Junction Temperature
TJ
−40 to +150
°C
Unclamped Inductive Switching
Energy (10 mH Inductor,
Non−repetitive)
EAS
100
mJ
ESD Rating (Human Body Model)
3B
ESD Rating (Machine Model)
M4
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NOTE:
The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RJA.
SCHOTTKY BARRIER
RECTIFIERS
8 AMPERES
30 VOLTS
http://onsemi.com
1,2,3
5,6
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
MARKING
DIAGRAM
B830
AYWZZ
A
A
A
Not Used
C
C
1
B830
= Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
Device
Package
Shipping†
ORDERING INFORMATION
MBR830MFST1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MBR830MFST3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
NRVB830MFST1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NRVB830MFST3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel


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