NVTFS4C05NWFTAG datasheet(4/6 Pages) ONSEMI

Part #	NVTFS4C05NWFTAG

Description	Single N- Channel Power MOSFET

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NVTFS4C05N

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TYPICAL CHARACTERISTICS

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Qg, TOTAL GATE CHARGE (nC)

25

20

15

10

30

5

0

250

1000

1250

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

RG, GATE RESISTANCE (W)

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

100

10

1

10

100

1000

0.9

0.8

0.7

0.6

0.5

0.4

0

2

4

6

8

10

12

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

100

10

1

0.1

1

10

100

1000

VGS = 0 V

TJ = 25°C

Ciss

Coss

Crss

QT

Qgs

Qgd

VDD = 15 V

ID = 15 A

VGS = 10 V

td(off)

td(on)

tr

tf

TJ = 25°C

TJ = 125°C

VGS = 0 V

VGS = 10 V

TC = 25°C

RDS(on) Limit

Thermal Limit

Package Limit

0.1 ms

10 ms

1 ms

dc

1750

2500

500

750

1500

2000

2250

3000

2750

1.0

0

2

4

6

8

10

0

4

8

1216

2024

28

32

TJ = 25°C

VDD = 15 V

VGS = 10 V

ID = 30 A

14

16

18

20

0.01 ms

0.1

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NVTFS4C05NWFTAG Datasheet(PDF) 4 Page - ON Semiconductor

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