NVGS4111P datasheet(2/5 Pages) ONSEMI

Part #	NVGS4111P

Description	Single P-Channel Power MOSFET

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NVGS4111P

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = −250 mA

−30

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

−17

mV/

°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = −24 V

TJ = 25°C

−1.0

mA

TJ = 125°C

−100

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±20 V

±100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = −250 mA

−1.0

−3.0

V

Negative Threshold Temperature Coefficient

VGS(TH)/TJ

5.0

mV/

°C

Drain−to−Source On Resistance

RDS(on)

VGS = −10 V, ID = −3.7 A

38

60

m

W

VGS = −4.5 V, ID = −2.7 A

68

110

Forward Transconductance

gFS

VDS = −10 V, ID = −3.7 A

6.0

S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

CISS

VGS = 0 V, f = 1.0 MHz,

VDS = −15 V

750

pF

Output Capacitance

COSS

140

Reverse Transfer Capacitance

CRSS

105

Total Gate Charge

QG(TOT)

VGS = −10 V, VDD = −15 V,

ID = −3.7 A

15.25

32

nC

Threshold Gate Charge

QG(TH)

0.8

Gate−to−Source Charge

QGS

2.6

Gate−to−Drain Charge

QGD

3.4

SWITCHING CHARACTERISTICS, VGS = −10 V (Note 4)

Turn−On Delay Time

td(ON)

VGS = −10 V, VDD = −15 V,

ID = −1.0 A, RG = 6.0 W

9.0

17

ns

Rise Time

tr

9.0

18

Turn−Off Delay Time

td(OFF)

38

85

Fall Time

tf

22

45

SWITCHING CHARACTERISTICS, VGS = −4.5 V (Note 4)

Turn−On Delay Time

td(ON)

VGS = −4.5 V, VDD = −15 V,

ID = −1.0 A, RG = 6.0 W

11

20

ns

Rise Time

tr

15

28

Turn−Off Delay Time

td(OFF)

28

56

Fall Time

tf

22

50

DRAIN − SOURCE DIODE CHARACTERISTICS

Characteristic

Symbol

Test Condition

Min

Typ

Max

Unit

Forward Diode Voltage

VDS

VGS = 0 V,

IS = −1.0 A

TJ = 25°C

−0.76

−1.2

V

TJ = 125°C

−0.60

Reverse Recovery Time

tRR

VGS = 0 V

dIS/dt = 100 A/ms, IS = −1.0 A

17

40

ns

Charge Time

ta

9.0

Discharge Time

tb

8.0

Reverse Recovery Charge

QRR

8.0

nC

3. Pulse Test: pulse width

v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

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