NVD4C05N datasheet(2/3 Pages) ONSEMI

Part #	NVD4C05N

Description	Single N?묬hannel Power MOSFET

Download	3 Pages

Scroll/Zoom	100%

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

Logo

2 / 3 page

NVD4C05N

www.onsemi.com

2

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

30

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

14.9

mV/

°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = 24 V

TJ = 25°C

1.0

mA

TJ = 125°C

10

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±20 V

±100

nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

1.3

2.2

V

Negative Threshold Temperature Coefficient

VGS(TH)/TJ

4.7

mV/

°C

Drain−to−Source On Resistance

RDS(on)

VGS = 10 V, ID = 45 A

3.4

4.1

m

W

VGS = 4.5 V, ID = 45 A

4.5

6.0

CHARGES, CAPACITANCES AND GATE RESISTANCES

Input Capacitance

Ciss

VGS = 0 V, f = 1.0 MHz,

VDS = 25 V

1970

pF

Output Capacitance

Coss

725

Reverse Transfer Capacitance

Crss

30

Total Gate Charge

QG(TOT)

VGS = 10 V, VDS = 24 V,

ID = 45 A

31

nC

Total Gate Charge

QG(TOT)

VGS = 4.5 V, VDS = 24 V,

ID = 45 A

14

nC

Threshold Gate Charge

QG(TH)

3.3

Gate−to−Source Charge

QGS

6.2

Gate−to−Drain Charge

QGD

3.2

Plateau Voltage

VGP

3.1

V

Gate Resistance

RG

1.0

W

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

td(on)

VGS = 4.5 V, VDS = 24 V,

ID = 45 A, RG = 0 W

11

ns

Rise Time

tr

107

Turn−Off Delay Time

td(off)

17

Fall Time

tf

6.0

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 45 A

TJ = 25°C

0.9

1.2

V

TJ = 125°C

0.8

Reverse Recovery Time

tRR

VGS = 0 V, dIs/dt = 100 A/ms,

IS = 45 A

41

ns

Charge Time

ta

21

Discharge Time

tb

20

Reverse Recovery Charge

QRR

26

nC

4. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

5. Switching characteristics are independent of operating junction temperatures.

ORDERING INFORMATION

Order Number

Package

Shipping†

NVD4C05NT4G

DPAK

(Pb−Free)

2500 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

Similar Part No. - NVD4C05N

Manufacturer	Part #	Datasheet	Description
Inchange Semiconductor ...	NVD4C05NT4G	250Kb / 2P	Isc N-Channel MOSFET Transistor

More results

Similar Description - NVD4C05N

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	NTMFS4H01N	91Kb / 7P	Power MOSFET Single N?묬hannel April, 2014 ??Rev. 1
	NVMFS5C404NL	80Kb / 6P	Single N?묬hannel Power MOSFET September, 2014 ??Rev. 2
	NVMFS5C410N	82Kb / 6P	Single N?묬hannel Power MOSFET August, 2015 ??Rev. 0
	NVMFS5C442N	87Kb / 6P	Single N?묬hannel Power MOSFET May, 2015 ??Rev. 1
	NVMFS5C450N	81Kb / 6P	Single N?묬hannel Power MOSFET August, 2015 ??Rev. 0
	NTMFS4825NFE	115Kb / 6P	Single N?묬hannel Power MOSFET May, 2012 ??Rev. 1
	NTMFS4933N	118Kb / 7P	Single N?묬hannel Power MOSFET May, 2012 ??Rev. 8
	NTMFS6B14N	76Kb / 6P	Single N?묬hannel Power MOSFET February, 2015 ??Rev. 1
	NTMKE4894N	128Kb / 6P	Single N?묬hannel Power MOSFET January, 2011 ??Rev. 3
	NTR4518N	74Kb / 6P	Single N?묬hannel Power MOSFET November, 2006 ??Rev. 0
Dongguan Pingjingsemi T...	PJM60H04NTF	967Kb / 7P	Single N?묬hannel Power MOSFET

More results

NVD4C05N Datasheet(PDF) 2 Page - ON Semiconductor

NVD4C05N Datasheet(HTML) 2 Page - ON Semiconductor

Similar Part No. - NVD4C05N

Similar Description - NVD4C05N

Html Pages

1 2 3

Datasheet Download

Link URL