NTLUD3C20CZ datasheet(2/4 Pages) ONSEMI

Part #	NTLUD3C20CZ

Description	Small Signal MOSFET

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NTLUD3C20CZ

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THERMAL RESISTANCE RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Ambient – Steady State, Minimum Pad (Note 1)

RqJA

89.3

°C/W

Junction−to−Ambient – t

v 5 s (Note 1)

54.6

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

FET

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

N

VGS = 0 V

ID = 250 mA

12

V

P

ID = −250 mA

−12

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS /

TJ

N

TBD

mV/

°C

P

TBD

Zero Gate Voltage Drain Current

IDSS

N

VGS = 0 V, VDS = 9.6 V

TJ = 25°C

1

mA

TJ = 125°C

10

P

VGS = 0 V, VDS = −9.6 V

TJ = 25°C

−1

mA

TJ = 125°C

−10

Gate−to−Source Leakage Current

IGSS

N

VDS = 0 V, VGS = ±8.0 V

±100

nA

P

±100

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

VGS(TH)

N

VGS = VDS

ID = 250 mA

0.4

1.0

V

P

ID = −250 mA

−0.4

−1.0

Negative Threshold Temperature

Coefficient

VGS(TH) / TJ

N

TBD

mV/

°C

P

TBD

Drain−to−Source On Resistance

RDS(on)

N

VGS = 4.5 V

ID = 5 A

18

23

m

W

VGS = 3.3 V

ID = 5 A

21

26

VGS = 2.5 V

ID = 4.6 A

25

31

VGS = 1.8 V

ID = 4 A

47

59

P

VGS = −4.5 V,

ID = −4 A

35

44

VGS = −3.3 V

ID = −4 A

44

55

VGS = −2.5 V,

ID = −3 A

60

75

VGS = −1.8 V

ID = −1 A

140

175

Forward Transconductance

gFS

N

VDS = 5 V

ID = 5 A

TBD

S

P

VDS = −5 V

ID = −4 A

TBD

CAPACITANCES

Input Capacitance

CISS

N

f = 1 MHz, VGS = 0 V

VDS = 9.6 V

1074

pF

Output Capacitance

COSS

147

Reverse Capacitance

CRSS

139

Input Capacitance

CISS

P

f = 1 MHz, VGS = 0 V

VDS = −9.6 V

1201

Output Capacitance

COSS

150

Reverse Capacitance

CRSS

145

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Switching characteristics are independent of operating junction temperatures

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